Semiconductor Device and Method of Forming Dam Material Around Periphery of Die to Reduce Warpage
First Claim
1. A method of making a semiconductor device, comprising:
- providing a temporary carrier having a designated area for a first semiconductor die;
forming a dam structure on the temporary carrier by depositing dam material on the temporary carrier around the designated area for the first semiconductor die;
mounting the first semiconductor die with its active surface oriented to the designated area on the temporary carrier;
depositing an encapsulant over the first semiconductor die and temporary carrier, the dam material selected to have a coefficient of thermal expansion (CTE) corresponding to a CTE of the encapsulant and a warpage characteristic opposite a warpage characteristic of he encapsulant;
removing the temporary carrier to expose a first side of the encapsulant and active surface of the first semiconductor die, the dam structure stiffening a periphery of the first semiconductor die;
forming a first interconnect structure over the first side of the encapsulant; and
singulating the semiconductor device.
5 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device has a temporary carrier with a designated area for a first semiconductor die. A dam material is deposited on the carrier around the designated area for a first semiconductor die. The first semiconductor die is mounted to the designated area on the carrier. An encapsulant is deposited over the first semiconductor die and carrier. The dam material is selected to have a CTE that is equal to or less than the CTE of the encapsulant. The carrier is removed to expose the encapsulant and first semiconductor die. A first interconnect structure is formed over the encapsulant. An EMI shielding layer can be formed over the first semiconductor die. A second interconnect structure is formed over a back surface of the first semiconductor die. A conductive pillar is formed between the first and second interconnect structures. A second semiconductor die is mounted to the second interconnect structure.
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Citations
28 Claims
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1. A method of making a semiconductor device, comprising:
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providing a temporary carrier having a designated area for a first semiconductor die; forming a dam structure on the temporary carrier by depositing dam material on the temporary carrier around the designated area for the first semiconductor die; mounting the first semiconductor die with its active surface oriented to the designated area on the temporary carrier; depositing an encapsulant over the first semiconductor die and temporary carrier, the dam material selected to have a coefficient of thermal expansion (CTE) corresponding to a CTE of the encapsulant and a warpage characteristic opposite a warpage characteristic of he encapsulant; removing the temporary carrier to expose a first side of the encapsulant and active surface of the first semiconductor die, the dam structure stiffening a periphery of the first semiconductor die; forming a first interconnect structure over the first side of the encapsulant; and singulating the semiconductor device. - View Dependent Claims (2, 3, 5, 6, 7, 26)
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4. (canceled)
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8. A method of making a semiconductor device, comprising:
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providing a carrier having a designated area for a first semiconductor component; forming a dam structure on the carrier by depositing dam material on the carrier around the designated area for the first semiconductor component; mounting the first semiconductor component to the designated area on the carrier; depositing an encapsulant over the first semiconductor component and carrier, the dam material selected to have a warpage characteristic opposite a warpage characteristic of the encapsulant and stiffening a periphery of the first semiconductor component; removing the carrier; and forming a first interconnect structure over the encapsulant. - View Dependent Claims (9, 11, 12, 13, 14, 27)
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10. (canceled)
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15. A method of making a semiconductor device, comprising:
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providing a first semiconductor component; depositing dam material around a periphery of the first semiconductor component; depositing an encapsulant over the first semiconductor component, the dam material selected to have a coefficient of thermal expansion (CTE) corresponding to a CTE of the encapsulant; forming a first interconnect structure over the encapsulant; and singulating the semiconductor device. - View Dependent Claims (16, 17, 18, 19, 20)
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21. A semiconductor device, comprising:
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a first semiconductor component; a dam material deposited around a periphery of the first semiconductor component; an encapsulant deposited over the first semiconductor component, the dam material selected to have a coefficient of thermal expansion (CTE) corresponding to a CTE of the encapsulant and a warpage characteristic opposite a warpage characteristic of the encapsulant; and a first interconnect structure formed over the encapsulant. - View Dependent Claims (22, 23, 25, 28)
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24. (canceled)
Specification