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Semiconductor Device and Method of Forming Dam Material Around Periphery of Die to Reduce Warpage

  • US 20110037155A1
  • Filed: 08/12/2009
  • Published: 02/17/2011
  • Est. Priority Date: 08/12/2009
  • Status: Active Grant
First Claim
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1. A method of making a semiconductor device, comprising:

  • providing a temporary carrier having a designated area for a first semiconductor die;

    forming a dam structure on the temporary carrier by depositing dam material on the temporary carrier around the designated area for the first semiconductor die;

    mounting the first semiconductor die with its active surface oriented to the designated area on the temporary carrier;

    depositing an encapsulant over the first semiconductor die and temporary carrier, the dam material selected to have a coefficient of thermal expansion (CTE) corresponding to a CTE of the encapsulant and a warpage characteristic opposite a warpage characteristic of he encapsulant;

    removing the temporary carrier to expose a first side of the encapsulant and active surface of the first semiconductor die, the dam structure stiffening a periphery of the first semiconductor die;

    forming a first interconnect structure over the first side of the encapsulant; and

    singulating the semiconductor device.

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