SPINTRONIC MAGNETIC NANOPARTICLE SENSORS WITH AN ACTIVE AREA LOCATED ON A MAGNETIC DOMAIN WALL
First Claim
1. A sensor for detecting the presence of a magnetic nanoparticle (N), said sensor being arranged on a support (1), on which also a plurality of non-magnetic contacts (Iin, GND, V1, V2) is arranged, electrically conductively connected to the sensor, said contacts being adapted to be connected to means for measuring magnetoresistance on the sensor,characterized in that it includes a planar ferromagnetic structure (3), comprising a detection area (31), shaped as a strip bent to form a corner, said detection area being adapted to selectively assume, as a response to an applied magnetic field, a first spin configuration comprising a transverse “
- head-to-head”
domain wall (TW), and a second spin configuration, wherein such a domain wall (TW) is absent, wherein said transition from the first configuration to the second configuration is provided for an applied magnetic field, having a component which is parallel to one of the angled sides of the detection area with an intensity higher than a transition threshold (H1x);
said transition threshold, magneto-resistively detectable, being affected by the proximity of a magnetic nanoparticle (N) to the detection area
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Accused Products
Abstract
A sensor is described for detecting the presence of a magnetic nanoparticle (N). The sensor is arranged on a support (1), on which a plurality of non-magnetic contacts (Iin, GND, V1, V2) electrically conductively connected to the sensor is disposed. The contacts are adapted to be connected to means for measuring magnetoresistance. The sensor includes a planar ferromagnetic nanostructure (3), comprising a detection area (31) shaped as a strip bent to form a corner. The detection area is adapted to selectively assume, as a response to an applied magnetic field, a first spin configuration comprising a transverse “head-to-head” domain wall (TW), and a second spin configuration, wherein such domain wall (TW) is absent. The transition from the first configuration to the second configuration is affected by the proximity of a magnetic nanoparticle (N) to the detection area.
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Citations
11 Claims
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1. A sensor for detecting the presence of a magnetic nanoparticle (N), said sensor being arranged on a support (1), on which also a plurality of non-magnetic contacts (Iin, GND, V1, V2) is arranged, electrically conductively connected to the sensor, said contacts being adapted to be connected to means for measuring magnetoresistance on the sensor,
characterized in that it includes a planar ferromagnetic structure (3), comprising a detection area (31), shaped as a strip bent to form a corner, said detection area being adapted to selectively assume, as a response to an applied magnetic field, a first spin configuration comprising a transverse “ - head-to-head”
domain wall (TW), and a second spin configuration, wherein such a domain wall (TW) is absent, wherein said transition from the first configuration to the second configuration is provided for an applied magnetic field, having a component which is parallel to one of the angled sides of the detection area with an intensity higher than a transition threshold (H1x);
said transition threshold, magneto-resistively detectable, being affected by the proximity of a magnetic nanoparticle (N) to the detection area - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
- head-to-head”
Specification