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Method for Fabrication of a Semiconductor Device and Structure

  • US 20110037497A1
  • Filed: 04/14/2009
  • Published: 02/17/2011
  • Est. Priority Date: 04/14/2009
  • Status: Active Grant
First Claim
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1. An Integrated Circuit device comprising:

  • a plurality of antifuse-configurable interconnect circuits; and

    a plurality of transistors arranged to configure at least one antifuse of said antifuse-configurable interconnect circuits, wherein said transistors are above said antifuse-configurable interconnect circuits.

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