Method Of Reducing Bit Error Rate For A Flash Memory
First Claim
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1. A method of reducing coupling effect in a flash memory, comprising:
- reading a neighboring page that is neighboring an original page;
outputting a flag that is set active if the neighboring page is an interfering page;
reading data from the neighboring page at least two more times using at least two distinct read voltages respectively; and
transferring threshold-voltage distributions associated with the original page and the neighboring page according to the read data and the flag.
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Abstract
A method of reducing coupling effect in a flash memory is disclosed. A neighboring page is read, and a flag is set active if the neighboring page is an interfering page. Data are read from the neighboring page at least two more times using at least two distinct read voltages respectively. The threshold-voltage distributions associated with an original page and the neighboring page are transferred according to the read data and the flag.
37 Citations
19 Claims
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1. A method of reducing coupling effect in a flash memory, comprising:
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reading a neighboring page that is neighboring an original page; outputting a flag that is set active if the neighboring page is an interfering page; reading data from the neighboring page at least two more times using at least two distinct read voltages respectively; and transferring threshold-voltage distributions associated with the original page and the neighboring page according to the read data and the flag. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of reading a flash memory, comprising:
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reading data from the flash memory with a default read voltage; determining firstly whether the read data using the default read voltage passes error correction control (ECC); determining an optimal read voltage if the readout data using the default read voltage do not pass the ECC, and re-reading data from the array cells of the flash memory with the determined optimal read voltage; determining secondly whether the read data using the determined optimal read voltage passes the ECC; and reducing coupling effect in the flash memory in order to reduce bit error rate for the flash memory. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification