Plasma Generation Controlled by Gravity-Induced Gas-Diffusion Separation (GIGDS) Techniques

• US 20110039355A1
• Filed: 08/10/2010
• Published: 02/17/2011
• Est. Priority Date: 08/12/2009
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Nozawa, Toshihisa, Zhao, Jianping, Chen, Lee, Funk, Merritt
• Granted Patent: US 8,323,521 B2
• Time in Patent Office: Days
• US Class Current: 438/9
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/32137 of silicon-containing layers

Abstract

The invention can provide apparatus and methods of processing a substrate using plasma generation by gravity-induced gas-diffusion separation techniques. By adding or using gases including inert and process gases with different gravities (i.e., ratio between the molecular weight of a gaseous constituent and a reference molecular weight), a two-zone or multiple-zone plasma can be formed, in which one kind of gas can be highly constrained near a plasma generation region and another kind of gas can be largely separated from the aforementioned gas due to differential gravity induced diffusion and is constrained more closer to a wafer process region than the aforementioned gas.

Claims

1. A method for processing a substrate using a Gravity-Induced Gas-Diffusion Separation-Controlled (GIGDSC) plasma processing subsystem, the method comprising:

positioning a substrate on a substrate holder in a lower portion of a process chamber configured to perform a GIGDSC procedure;

creating a first light-gas stabilization plasma in a plasma generation space in an upper portion of the process chamber during a first pre-processing time using a light plasma generation gas;

determining a first light gas stabilization value during the first pre-processing time;

comparing the first light gas stabilization value to first stabilization limits during the first pre-processing time;

performing at least one corrective action to improve the first light gas stabilization value when the first light gas stabilization value exceeds one or more of the stabilization limits during the first pre-processing time; and

creating a second light-gas stabilization plasma and an initial heavy-gas pre-processing plasma during a second pre-processing time when the first light gas stabilization value does not exceed at least one of the stabilization limits during the first pre-processing time, wherein the initial heavy-gas pre-processing plasma is created using at least one heavy process gas in a plasma processing space proximate the substrate.

2. The method of claim 1, further comprising:

determining an initial heavy-gas stabilization value during the second pre-processing time;

comparing the initial heavy-gas stabilization value to initial heavy-gas stabilization limits during the second pre-processing time;

performing at least one second corrective action to improve the initial heavy-gas stabilization value when the initial heavy-gas stabilization value exceeds one or more of the initial heavy-gas stabilization limits during the second pre-processing time; and

creating a new light-gas stabilization plasma and a new heavy-gas processing plasma during a processing time when the initial heavy-gas stabilization value does not exceed at least one of the initial heavy-gas stabilization limits during the second pre-processing time, wherein the substrate is processed using the new heavy-gas processing plasma during the processing time.

3. The method of claim 1, wherein the light plasma generation gas comprises Helium (He), Hydrogen (H₂), or Neon (Ne), or any combination thereof and wherein the at least one heavy process gas comprises Argon (Ar), an Oxygen-containing gas, a Fluorocarbon gas, a Hydrofluorocarbon gas, or a Halogen-containing gas, or any combination thereof, the Fluorocarbon gas having a form C_xF_y, wherein x and y are equal to 1 or more, the Hydrofluorocarbon gas having a form C_xF_yH_z, wherein x, y and z are equal to 1 or more, and the) Halogen-containing gas having a halogen atom selected from the group consisting of Cl, Br, and F.

4. The method of claim 1, wherein a first gas mixture is provided to the process chamber using at least one gas supply element coupled to the process chamber, the first gas mixture including one or more lighter gaseous constituents that diffuse into the plasma generation space and one or more heavier gaseous constituents that diffuse into the plasma processing space, the lighter gaseous constituents including the light plasma generation gas and the heavier gaseous constituents including the at least one heavy process gas.

5. The method of claim 1, wherein the light plasma generation gas is provided to the process chamber using a first gas supply element coupled to the upper portion of the process chamber and the at least one heavy process gas is provided to the process chamber using a second gas supply element coupled to the lower portion of the process chamber.

6. The method of claim 1, wherein a plasma source is coupled to the plasma generation space and is configured to generate the GIGDSC plasma using at least one lighter gaseous constituent of the light plasma generation gas that diffuse into the plasma generation space, wherein the plasma source includes a plasma-facing surface configured to form a top wall in the process chamber, and the plasma-facing surface has a first recess therein.

7. A method for processing a substrate using a Gravity-Induced Gas-Diffusion Separation-Controlled (GIGDSC) plasma processing subsystem, the method comprising:

positioning a substrate on a substrate holder in a lower portion of a process chamber configured to perform a GIGDSC procedure;

creating an initial light-gas stabilization plasma in a plasma generation space in an upper portion of the process chamber during a first pre-processing time using a light plasma generation gas;

creating an initial heavy-gas pre-processing plasma in a plasma processing space in the lower portion of the process chamber during the first pre-processing time using at least one heavy process gas;

determining an initial heavy-gas stabilization value during the first pre-processing time;

comparing the initial heavy-gas stabilization value to initial heavy-gas stabilization limits during the first pre-processing time;

performing at least one corrective action to improve the initial heavy-gas stabilization value when the initial heavy-gas stabilization value exceeds one or more of the initial heavy-gas stabilization limits during the first pre-processing time; and

creating a new light-gas stabilization plasma and a new heavy-gas processing plasma during a processing time when the initial heavy-gas stabilization value does not exceed at least one of the initial heavy-gas stabilization limits during the first pre-processing time, wherein the new heavy-gas pre-processing plasma is created using at least one new heavy process gas in the plasma processing space proximate the substrate during the processing time.

8. The method of claim 7, further comprising:

determining an initial light-gas stabilization value during the first pre-processing time;

comparing the initial light-gas stabilization value to initial light-gas stabilization limits during the first pre-processing time; and

performing at least one additional corrective action to improve the initial light-gas stabilization value when the initial light-gas stabilization value exceeds one or more of the initial light-gas stabilization limits during the first pre-processing time.

9. The method of claim 7, further comprising:

determining a new heavy-gas stabilization value during the processing time;

comparing the new heavy-gas stabilization value to new heavy-gas stabilization limits during the processing time; and

performing at least one new corrective action to improve the new heavy-gas stabilization value when the new heavy-gas stabilization value exceeds one or more of the new heavy-gas stabilization limits during the processing time.

10. The method of claim 7, further comprising:

determining a new light-gas stabilization value during the processing time;

comparing the new light-gas stabilization value to new light-gas stabilization limits during the processing time; and

performing at least one new corrective action to improve the new light-gas stabilization value when the new light-gas stabilization value exceeds one or more of the new light-gas stabilization limits during the processing time.

11. The method of claim 7, wherein the light plasma generation gas comprises Helium (He), Hydrogen (H₂), or Neon (Ne), or any combination thereof and wherein the at least one heavy process gas comprises Argon (Ar), an Oxygen-containing gas, a Fluorocarbon gas, a Hydrofluorocarbon gas, or a Halogen-containing gas, or any combination thereof, the Fluorocarbon gas having a form C_xF_y, wherein x and y are equal to 1 or more, the Hydrofluorocarbon gas having a form C_xF_yH_z, wherein x, y and z are equal to 1 or more, and the) Halogen-containing gas having a halogen atom selected from the group consisting of Cl, Br, and F.

12. The method of claim 7, wherein a first gas mixture is provided to the process chamber using at least one gas supply element coupled to the process chamber, the first gas mixture including one or more lighter gaseous constituents that diffuse into the plasma generation space and one or more heavier gaseous constituents that diffuse into the plasma processing space, the lighter gaseous constituents including the light plasma generation gas and the heavier gaseous constituents including the at least one heavy process gas.

13. The method of claim 7, wherein the light plasma generation gas is provided to the process chamber using a first gas supply element coupled to the upper portion of the process chamber and the at least one heavy process gas is provided to the process chamber using a second gas supply element coupled to the lower portion of the process chamber.

14. The method of claim 7, wherein a plasma source is coupled to the plasma generation space and is configured to generate the GIGDSC plasma using at least one lighter gaseous constituent of the light plasma generation gas that diffuse into the plasma generation space, wherein the plasma source includes a plasma-facing surface configured to form a top wall in the process chamber, and the plasma-facing surface has a first recess therein.

15. A method for processing a substrate using a Gravity-Induced Gas-Diffusion Separation-Controlled (GIGDSC) plasma processing subsystem, the method comprising:

positioning a substrate on a substrate holder in an upper portion of a process chamber configured to perform a GIGDSC procedure;

creating an initial heavy-gas stabilization plasma in a plasma generation space in an lower portion of the process chamber during a first pre-processing time using a heavy plasma generation gas;

creating an initial light-gas pre-processing plasma in a plasma processing space in the upper portion of the process chamber during the first pre-processing time using at least one light process gas;

determining an initial light-gas stabilization value during the first pre-processing time;

comparing the initial light-gas stabilization value to initial light-gas stabilization limits during the first pre-processing time;

performing at least one corrective action to improve the initial light-gas stabilization value when the initial light-gas stabilization value exceeds one or more of the initial light-gas stabilization limits during the first pre-processing time; and

creating a new heavy-gas stabilization plasma and a new light-gas processing plasma during a processing time when the initial light-gas stabilization value does not exceed at least one of the initial light-gas stabilization limits during the first pre-processing time, wherein the new light-gas processing plasma is created using at least one new light process gas in the plasma processing space proximate the substrate during the processing time.

16. The method of claim 15, further comprising:

determining an initial heavy-gas stabilization value during the first pre-processing time;

comparing the initial heavy-gas stabilization value to initial heavy-gas stabilization limits during the first pre-processing time; and

performing at least one additional corrective action to improve the initial heavy-gas stabilization value when the initial heavy-gas stabilization value exceeds one or more of the initial heavy-gas stabilization limits during the first pre-processing time.

17. The method of claim 15, further comprising:

determining a new light-gas stabilization value during the processing time;

comparing the new light-gas stabilization value to new light-gas stabilization limits during the processing time; and

performing at least one new corrective action to improve the new light-gas stabilization value when the new light-gas stabilization value exceeds one or more of the new light-gas stabilization limits during the processing time.

18. The method of claim 15, further comprising:

determining a new heavy-gas stabilization value during the processing time;

comparing the new heavy-gas stabilization value to new heavy-gas stabilization limits during the processing time; and

performing at least one new corrective action to improve the new heavy-gas stabilization value when the new heavy-gas stabilization value exceeds one or more of the new heavy-gas stabilization limits during the processing time.

19. The method of claim 15, wherein the heavy plasma generation gas comprises Xeon (Xe), or Krypton (Kr), or any combination thereof and the at least one light process gas comprises Argon (Ar), an Oxygen-containing gas, a Fluorocarbon gas, a Hydrofluorocarbon gas, or a Halogen-containing gas, or any combination thereof, the Fluorocarbon gas having a form C_xF_y, wherein x and y are equal to 1 or more, the Hydrofluorocarbon gas having a form C_xF_yH_z, wherein x, y and z are equal to 1 or more, and the) Halogen-containing gas having a halogen atom selected from the group consisting of Cl, Br, and F.

20. The method of claim 15, wherein a first gas mixture is provided to the process chamber using at least one gas supply element coupled to the process chamber, the first gas mixture including one or more lighter gaseous constituents that diffuse into the plasma processing space and one or more heavier gaseous constituents that diffuse into the plasma generation space, the lighter gaseous constituents including the new light process gas and the heavier gaseous constituents including at least one heavy plasma generation gas.