Semiconductor Devices Semiconductor Pillars and Method of Fabricating the Same
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Accused Products
Abstract
A semiconductor device includes a trench isolation region provided on a substrate and defining first and second active regions separated from each other. A first semiconductor pillar protruding upward from the first active region is provided. A second semiconductor pillar protruding upward from the second active region is provided. A first gate mask extending to cross over the first and second active regions is provided. The first gate mask surrounds upper sidewalls of the first and second semiconductor pillars. A first gate line formed below the first gate mask, separated from the first and second active regions, and surrounding parts of sidewalls of the first and second semiconductor pillars is provided.
14 Citations
35 Claims
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1-24. -24. (canceled)
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25. A semiconductor device, comprising:
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a substrate; a trench isolation region on the substrate that defines first and second spaced-apart active regions; a first semiconductor pillar protruding upward from the first active region; a second semiconductor pillar protruding upward from the second active region; a first gate mask extending to cross over the first and second active regions, the first gate mask surrounding upper portions of sidewalls of the first and second semiconductor pillars; and a first gate line below the first gate mask, the first gate line being spaced-apart from the first and second active regions, the first gate line surrounding parts of the sidewalls of the first and second semiconductor pillars. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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Specification