FILM FORMING APPARATUS AND FILM FORMING METHOD

• US 20110039420A1
• Filed: 03/16/2009
• Published: 02/17/2011
• Est. Priority Date: 03/25/2008
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Harada, Muneo, Nakao, Ken
• Granted Patent: US 8,470,720 B2
• Time in Patent Office: Days
• US Class Current: 438/781
• CPC Class Codes: B05D 1/60 Deposition of organic layers from vapour phase vapour phase deposition in general C23C14/00, C23C16/00
• CPC Class Codes: B05D 3/0473 for heating, e.g. vapour heating
• CPC Class Codes: B05D 3/0493 using vacuum
• CPC Class Codes: C23C 14/12 Organic material
• CPC Class Codes: C23C 14/243 Crucibles for source material C23C14/28, C23C14/30 take precedence
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02312 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/312 Organic layers, e.g. photoresist H01L21/3105, H01L21/32 take precedence; photoresists per se G03C

Abstract

A wall surface of a film forming container is heated to or above a vaporization temperature of a material monomer, which is used to form an organic film, by using an external heater formed along the wall surface of the film forming container, substrates are heated to a thermal polymerization reaction temperature by using an internal heater that is disposed apart from the external heater and near a substrate-supporting container in which the substrates are received, and the organic film is formed through thermal polymerization occurring on the substrates by supplying the material monomer into the film forming container.

Claims

1. A film forming apparatus comprising:

a substrate-supporting container which supports a plurality of substrates to be spaced apart from one another;

a film forming container in which the substrate-supporting container is received, and which supplies a material monomer to the substrates to form an organic film through thermal polymerization;

a supplier of the material monomer, which is formed in the film forming container;

an external heater which is formed along a wall surface of the film forming container; and

an internal heater which is disposed apart from the external heater and near the substrate-supporting container,

wherein the external heater heats the wall surface of the film forming container to or above a vaporization temperature of the material monomer, and

the internal heater heats the substrates to a thermal polymerization reaction temperature of the material monomer.

2. The film forming apparatus of claim 1, wherein a space between the external heater and the internal heater is held at a depressurized state.

3. The film forming apparatus of claim 1, wherein a heating gas flows between the external heater and the internal heater.

4. The film forming apparatus of claim 3, wherein the heating gas is a non-reactive gas.

5. The film forming apparatus of claim 3, wherein the heating gas is heated to the thermal polymerization reaction temperature.

6. The film forming apparatus of claim 1, wherein the substrate comprises a substrate for forming an organic film, and a support substrate attached to a rear surface of the substrate for forming the organic film.

7. The film forming apparatus of claim 1, wherein the supplier comprises:

a first gas introduction pipe which is a straight pipe erected upward from a downside and having a closed front end, and which comprises gas ejection holes, through which the material monomer is ejected, formed at predetermined intervals in a pipe wall of the first gas introduction pipe; and

a second gas introduction pipe which is a U-shaped pipe bent downward from an upside and having a closed front end, and which comprises gas ejection holes, through which the material monomer is ejected, formed at predetermined intervals in a pipe wall of a portion bent downward in the second gas introduction pipe .

8. The film forming apparatus of claim 1, wherein the organic film constitutes a through via insulating film in a semiconductor integrated circuit.

9. A film forming method comprising:

supporting a plurality of substrates to be spaced apart from one another in a substrate-supporting container received in a film forming container;

heating a wall surface of the film forming container to or above a vaporization temperature of a material monomer, which is to be supplied to form an organic film, by using an external heater formed along the wall surface of the film forming container;

heating the substrates to a thermal polymerization reaction temperature of the material monomer by using an internal heater that is disposed apart from the external heater and near the substrate-supporting container; and

forming the organic film through thermal polymerization occurring on the substrates by supplying the material monomer into the film forming container from a supplier formed in the film forming container.

10. The film forming method of claim 9, wherein a space between the external heater and the internal heater is held at a depressurized state.

11. The film forming method of claim 9, wherein a heating gas flows between the external heater and the internal heater.

12. The film forming method of claim 11, wherein the heating gas is a non-reactive gas.

13. The film forming method of claim 11, wherein the heating gas is heated to the thermal polymerization reaction temperature.

14. The film forming method of claim 9, wherein the substrate comprises a substrate for forming the organic film, and a support substrate attached to a rear surface of the substrate for forming the organic film,

wherein the organic film is formed on a surface of the substrate for forming the organic film.

15. The film forming method of claim 9, wherein the supplier comprises

a first gas introduction pipe which is a straight pipe erected upward from a downside and having a closed front end, and which comprises gas ejection holes, through which the material monomer is ejected, formed at predetermined intervals in a pipe wall of the first gas introduction pipe;

and

a second gas introduction pipe which is a U-shaped pipe bent downward from an upside and having a closed front end, and which comprises gas ejection holes, through which the material monomer is ejected, formed at predetermined intervals in a pipe wall of a portion bent downward in the second gas introduction pipe,

wherein the amount of the material monomer supplied to the substrates is uniform over the surfaces of the substrates.

16. The film forming method of claim 9, wherein the organic film constitutes a through via film in a semiconductor integrated circuit.