REAR-CONTACT SOLAR CELL HAVING ELONGATE, INTER-DIGITATED EMITTER AND BASE REGIONS ON THE REAR SIDE AND METHOD FOR PRODUCING THE SAME
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Abstract
The invention relates to a rear-contact solar cell and to a method for producing the same, wherein elongate emitter regions (5) and elongate base regions (7) are defined in a semiconductor substrate (1) in a finely interleaved manner on the surface of the rear side of the cell. The elongate emitter regions (5) are contacted by elongate emitter contacts (11) that extend at a right angle thereto, and the elongate base regions (7) are contacted by elongate base contacts (13) that extend at a right angle thereto, the structural width of the emitter and base regions (5, 7) being substantially smaller than the structural width of the emitter and base contacts. The finely interleaved arrangement of emitter and base regions (5, 7) results in good current collecting properties and low series resistances within the semiconductor substrate. Owing to the less complicated structures of the metal contacts, the latter can be produced in a simple and reliable manner.
35 Citations
20 Claims
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1-10. -10. (canceled)
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11. Rear-contact solar cell, having:
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a semiconductor substrate; elongate base regions on the rear side surface of the semiconductor substrate, the base regions having a base semiconductor type; elongate emitter regions on a rear side surface of the semiconductor substrate, the emitter regions having an emitter semiconductor type opposite to the base semiconductor type; elongate emitter contacts transverse to the elongate emitter regions for electrically contacting the emitter regions; elongate base contacts transverse to the elongate base regions for electrically contacting the base regions; wherein the elongate emitter regions have smaller structural widths than the elongate emitter contacts and wherein the elongate base regions have smaller structural widths than the elongate base contacts. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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20. Method for producing a solar cell, including:
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providing a semiconductor substrate; forming elongate base regions on the rear side surface of the semiconductor substrate, the base regions having a base semiconductor type; forming elongate emitter regions on a rear side surface of the semiconductor substrate, the emitter regions having an emitter semiconductor type opposite to the base semiconductor type; forming elongate emitter contacts transversely to the elongate emitter regions for electrically contacting the emitter regions; forming elongate base contacts transversely to the elongate base regions for electrically contacting the base regions; wherein the elongate emitter regions have smaller structural widths than the elongate emitter contacts and wherein the elongate base regions have smaller structural widths than the elongate base contacts.
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Specification