×

NITRIDE SEMICONDUCTOR LED AND FABRICATION METHOD THEREOF

  • US 20110042645A1
  • Filed: 11/01/2010
  • Published: 02/24/2011
  • Est. Priority Date: 07/06/2005
  • Status: Active Grant
First Claim
Patent Images

1. A light emitting diode, comprising:

  • a first conductive semiconductor layer;

    an active layer on the first conductive semiconductor layer;

    a second conductive semiconductor layer on the active layer; and

    a fourth semiconductor layer on the second conductive semiconductor layer,wherein the fourth semiconductor layer is partially protruded from the second conductive semiconductor layer and spaced apart from each other,wherein the fourth semiconductor layer includes a dopant of a opposite polarity from of polarity of the first conductive semiconductor layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×