NITRIDE SEMICONDUCTOR LED AND FABRICATION METHOD THEREOF
First Claim
Patent Images
1. A light emitting diode, comprising:
- a first conductive semiconductor layer;
an active layer on the first conductive semiconductor layer;
a second conductive semiconductor layer on the active layer; and
a fourth semiconductor layer on the second conductive semiconductor layer,wherein the fourth semiconductor layer is partially protruded from the second conductive semiconductor layer and spaced apart from each other,wherein the fourth semiconductor layer includes a dopant of a opposite polarity from of polarity of the first conductive semiconductor layer.
1 Assignment
0 Petitions
Accused Products
Abstract
A nitride semiconductor light emitting diode according to the present invention, includes: a substrate; a buffer layer formed on the substrate; an In-doped GaN layer formed on the buffer layer; a first electrode layer formed on the In-doped GaN layer; an InxGa1−xN layer formed on the first electrode layer; an active layer formed on the InxGa1−xN layer; a first P—GaN layer formed on the active layer; a second electrode layer formed on the first P—GaN layer; a second P—GaN layer partially protruded on the second electrode layer; and a third electrode formed on the second P—GaN layer.
-
Citations
20 Claims
-
1. A light emitting diode, comprising:
-
a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; and a fourth semiconductor layer on the second conductive semiconductor layer, wherein the fourth semiconductor layer is partially protruded from the second conductive semiconductor layer and spaced apart from each other, wherein the fourth semiconductor layer includes a dopant of a opposite polarity from of polarity of the first conductive semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A light emitting diode, comprising:
-
a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; and a third conductive semiconductor layer on the second conductive semiconductor layer; a fourth semiconductor layer on the second conductive semiconductor layer; and a fifth semiconductor layer formed on a surface of the fourth semiconductor layer, wherein the third conductive semiconductor layer and the second conductive semiconductor layer has a substantially same width, wherein the fourth semiconductor layer is partially protruded from the second conductive semiconductor layer and spaced apart from each other, wherein the fourth semiconductor layer includes a dopant of a opposite polarity from of polarity of the first conductive semiconductor layer - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
-
-
20. A light emitting diode, comprising:
-
a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; and a fourth semiconductor layer on the second conductive semiconductor layer, wherein the fourth semiconductor layer is provided in a plurality, wherein the fourth semiconductor layer are spaced apart from each other, wherein the fourth semiconductor layer includes a slant side surface.
-
Specification