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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20110042667A1
  • Filed: 07/17/2010
  • Published: 02/24/2011
  • Est. Priority Date: 08/21/2009
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming, over a substrate, a source electrode and a drain electrode from a metal film and a channel layer from oxide semiconductor;

    forming a gate insulating film over the source electrode, the drain electrode, and the channel layer;

    forming a conductive film over the gate insulating film;

    coating the conductive film with negative resist;

    exposing the negative resist to light from a back of the substrate using the source electrode and the drain electrode as a mask;

    removing the negative resist except exposed part of the negative resist; and

    forming a gate electrode by etching the conductive film using the exposed part as an etching mask.

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