CRACK FREE MULTILAYERED DEVICES, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME
First Claim
1. An article comprising:
- a substrate;
an interlayer comprising aluminum nitride, gallium nitride, boron nitride, indium nitride or a solid solution of aluminum nitride, gallium nitride, boron nitride and/or indium nitride;
the interlayer being directly disposed upon the substrate and in contact with the substrate;
where the interlayer comprises a columnar film and/or nanorods and/or nanotubes; and
a group-III nitride layer disposed upon the interlayer;
where the group-III nitride layer completely covers a surface of the interlayer that is opposed to a surface in contact with the substrate;
the group-III nitride layer being free from cracks.
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Accused Products
Abstract
Disclosed herein is an article comprising a substrate; an interlayer comprising aluminum nitride, gallium nitride, boron nitride, indium nitride or a solid solution of aluminum nitride, gallium nitride, boron nitride and/or indium nitride; the interlayer being directly disposed upon the substrate and in contact with the substrate; where the interlayer comprises a columnar film and/or nanorods and/or nanotubes; and a group-III nitride layer disposed upon the interlayer; where the group-III nitride layer completely covers a surface of the interlayer that is opposed to a surface in contact with the substrate; the group-III nitride layer being free from cracks.
61 Citations
19 Claims
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1. An article comprising:
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a substrate; an interlayer comprising aluminum nitride, gallium nitride, boron nitride, indium nitride or a solid solution of aluminum nitride, gallium nitride, boron nitride and/or indium nitride;
the interlayer being directly disposed upon the substrate and in contact with the substrate;
where the interlayer comprises a columnar film and/or nanorods and/or nanotubes; anda group-III nitride layer disposed upon the interlayer;
where the group-III nitride layer completely covers a surface of the interlayer that is opposed to a surface in contact with the substrate;
the group-III nitride layer being free from cracks. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method comprising:
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disposing on a substrate an interlayer comprising interlayer comprising aluminum nitride, gallium nitride, boron nitride, indium nitride or a solid solution of aluminum nitride, gallium nitride, boron nitride and/or indium nitride;
the interlayer being directly disposed upon the substrate and in contact with the substrate;
where the interlayer comprises a columnar film and/or nanorods and/or nanotubes; anddisposing on the interlayer a group-III nitride layer;
where the group-III nitride layer is free from cracks. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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Specification