SEMICONDUCTOR LIGHT EMITTING DIODES INCLUDING MULTIPLE BOND PADS ON A SINGLE SEMICONDUCTOR DIE

• US 20110042705A1
• Filed: 11/03/2010
• Published: 02/24/2011
• Est. Priority Date: 06/11/2007
• Status: Active Grant

• Current Assignee: CREE Led Incorporated (Smart Global Holdings Incorporated)
• Original Assignee: CREE Incorporated (Wolfspeed, Inc.)
• Inventors: Edmond, John Adam
• Granted Patent: US 8,524,515 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material

Abstract

A light emitting device includes a single semiconductor die light emitting diode and at least five bond pads on the single semiconductor die. The bond pads may be in the four corners and at least one midpoint of the single semiconductor die. A wavelength conversion layer may be provided and bond pad extensions may extend through the wavelength conversion layer. Multiple wire bond connections may also be provided.

Claims

1. A light emitting device comprising:

a semiconductor light emitting diode that comprises a single semiconductor die; and

at least five bond pads on the single semiconductor die.

2. A light emitting device according to claim 1 wherein the single semiconductor die is of at least about 4 mm² in area.

3. A light emitting device according to claim 2 wherein the single semiconductor die includes four sides, each of which includes a midpoint and which define four corners, and wherein a bond pad is at each corner and at at least one midpoint of the single semiconductor die.

4. A light emitting device according to claim 2 wherein the single semiconductor die includes four sides, each of which includes a midpoint and which define four corners, and wherein a bond pad is at each corner and at each midpoint of the single semiconductor die.

5. A light emitting device according to claim 1 further comprising:

a wavelength conversion layer on the single semiconductor die; and

at least five bond pad extensions, a respective one of which is on a respective one of the bond pads and extends through the wavelength conversion layer.

6. A light emitting device according to claim 1 wherein the single semiconductor die includes four sides, the light emitting device further comprising at least five spaced apart cathode contact lines on the single semiconductor die extending parallel to a first opposing pair of the four sides and at least five spaced apart cathode contact lines on the single semiconductor die extending parallel to a second opposing pair of the four sides, all of which are electrically connected to the bond pads.

7. A light emitting device according to claim 1 further comprising a plurality of wire bond connections that are electrically connected to a subset, less than all, of the plurality of bond pads.

8. A light emitting device according to claim 3 further comprising a plurality of wire bond connections, a respective one of which is electrically connected to a respective one of the plurality of bond pads.

9. A light emitting device according to claim 4 further comprising a plurality of wire bond connections, a respective one of which is electrically connected to a respective one of the plurality of bond pads.

10. A light emitting device comprising:

a semiconductor light emitting diode that comprises a single semiconductor die of at least about 4 mm² in area that includes four sides, each of which includes a midpoint and which define four corners; and

a plurality of bond pads on the single semiconductor die, a respective one of which is at each corner and at at least one midpoint of the single semiconductor die.

11. A light emitting device according to claim 10 wherein a bond pad is at each corner and at each midpoint of the single semiconductor die.

12. A light emitting device according to claim 10 further comprising:

a wavelength conversion layer on the single semiconductor die; and

a plurality of bond pad extensions, a respective one of which is on a respective one of the bond pads and extends through the wavelength conversion layer.

13. A light emitting device according to claim 10 further comprising at least five spaced apart cathode contact lines on the single semiconductor die extending parallel to a first opposing pair of the four sides and at least five spaced apart cathode contact lines on the single semiconductor die extending parallel to a second opposing pair of the four sides, all of which are electrically connected to the bond pads.

14. A light emitting device according to claim 10 further comprising a plurality of wire bond connections that are electrically connected to a subset, less than all, of the plurality of bond pads.

15. A light emitting device according to claim 10 further comprising a plurality of wire bond connections, a respective one of which is electrically connected to a respective one of the plurality of bond pads.

16. A light emitting device according to claim 11 further comprising a plurality of wire bond connections, a respective one of which is electrically connected to a respective one of the plurality of bond pads.

17. A light emitting device comprising:

a semiconductor light emitting diode that comprises a single semiconductor die of at least about 4 mm² in area;

at least five bond pads on the single semiconductor die;

a wavelength conversion layer on the single semiconductor die; and

at least five bond pad extensions, a respective one of which is on a respective one of the bond pads and extends through the wavelength conversion layer.

18. A light emitting device according to claim 17 wherein the single semiconductor die includes four sides, each of which includes a midpoint and which define four corners, and wherein a bond pad and a bond pad extension are at each corner and at at least one midpoint of the single semiconductor die.

19. A light emitting device according to claim 17 wherein the single semiconductor die includes four sides, each of which includes a midpoint and which define four corners, and wherein a bond pad and a bond pad extension is at each corner and at each midpoint of the single semiconductor die.

20. A light emitting device according to claim 17 wherein the single semiconductor die includes four sides, the light emitting device further comprising at least five spaced apart cathode contact lines on the single semiconductor die extending parallel to a first opposing pair of the four sides and at least five spaced apart cathode contact lines on the single semiconductor die extending parallel to a second opposing pair of the four sides, all of which are electrically connected to the bond pads.

21. A light emitting device according to claim 17 further comprising a plurality of wire bond connections that are electrically connected to a subset, less than all, of the plurality of bond pad extensions.

22. A light emitting device according to claim 18 further comprising a plurality of wire bond connections, a respective one of which is electrically connected to a respective one of the plurality of bond pad extensions.

23. A light emitting device according to claim 19 further comprising a plurality of wire bond connections, a respective one of which is electrically connected to a respective one of the plurality of bond pad extensions.