APPARATUS COMPRISING A DEVICE AND METHOD FOR PRODUCING SAME

• US 20110042764A1
• Filed: 11/03/2010
• Published: 02/24/2011
• Est. Priority Date: 03/15/2007
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Franosch, Martin, Handtmann, Martin, Oppermann, Klaus-Guenter
• Granted Patent: US 8,618,621 B2
• Time in Patent Office: Days
• US Class Current: 257/416
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/11002 for supporting the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/11 Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 of an individual bump connector
• CPC Class Codes: H01L 24/16 of an individual bump connector
• CPC Class Codes: H01L 24/96 the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01068 Erbium [Er]
• CPC Class Codes: H01L 2924/01072 Hafnium [Hf]
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/1421 : RF devices
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H03H 9/02125 : of parasitic elements

Abstract

An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.

Claims

1. An apparatus, comprising:

a device layer structure;

a device integrated into the device layer structure;

an insulating carrier substrate; and

an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate.

2. The apparatus according to claim 1, wherein the insulating carrier substrate comprises a glass or ceramic material.

3. The apparatus according to claim 1, wherein the insulating carrier substrate and the insulating layer comprise different materials.

4. The apparatus according to claim 1, wherein the insulating layer comprises a silicon nitride or a silicon oxide.

5. The apparatus according to claim 1, wherein the insulating carrier substrate includes a cavity.

6. The apparatus according to claim 1, wherein the cavity borders to the insulating layer.

7. The apparatus according to claim 1, wherein the device comprises a bulk acoustic wave filter.

8. The apparatus according to claim 1, further comprising a temporary carrier substrate, wherein the temporary carrier substrate is affixed to a surface of the device layer structure opposed to the insulating carrier substrate.

9. The apparatus according to claim 1, wherein a film is disposed between the temporary carrier substrate and the device layer structure.

10. An apparatus, comprising:

a device integrated into a device layer structure disposed on an insulating layer;

a housing layer disposed on the device layer structure and housing the device;

a contact providing an electrical connection between the device and a surface of the housing layer opposite to the device layer structure; and

a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposite to the device layer structure.

11. The apparatus according to claim 10, wherein the housing layer comprises a resin.

12. The apparatus according to claim 10, wherein the housing layer comprises a photoresist.

13. The apparatus according to claim 10, wherein the housing layer comprises a solid material, a modulus of elasticity of the solid material being greater than 100 MPa.

14. The apparatus according to claim 10, wherein the insulating layer comprises a silicon nitride or a silicon oxide.

15. The apparatus according to claim 10, wherein a solder bump is disposed on the housing layer, the solder bump penetrating the molding material and electrically connecting to the device.

16. The apparatus according to claim 10, wherein a cavity is disposed between a housing layer surface facing the device layer structure and a device layer structure surface facing the housing layer with the device bordering to the cavity.

17. The apparatus according to claim 10, wherein the device comprises a bulk acoustic wave filter.