Semiconductor Device having variable parameter selection based on temperature and test method

• US 20110044118A1
• Filed: 12/10/2009
• Published: 02/24/2011
• Est. Priority Date: 04/19/2006
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Intellectual Ventures Holding 83 LLC (Intellectual Ventures LLC)
• Inventors: Walker, Darryl G.
• Granted Patent: US 8,040,742 B2
• Time in Patent Office: Days
• US Class Current: 365/189.09
• CPC Class Codes: G01K 7/425 Thermal management of integrated systems

Abstract

A semiconductor device that may include temperature sensing circuits is disclosed. The temperature sensing circuits may be used to control various parameters, such as internal regulated supply voltages, internal refresh frequency, or a word line low voltage. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without compromising performance at normal operating temperatures. Each temperature sensing circuit may include a selectable temperature threshold value as well as a selectable temperature hysteresis value. In this way, temperature performance characteristics may be finely tuned. Furthermore, a method of testing the temperature sensing circuits is disclosed in which a current value may be monitored and temperature threshold values and temperature hysteresis values may be thereby determined.

Claims

1-20. -20. (canceled)

21. An apparatus comprising:

a first temperature-sensing circuit configured to provide a first temperature indication based on a first temperature threshold value;

a driver circuit including first and second outputs, wherein the driver circuit is configured to;

receive the first temperature indication;

provide a first output voltage to the first output if the first temperature indication is in a first state; and

provide a second output voltage to the first output if the first temperature indication is in a second state; and

an amplifier configured to amplify a third output voltage from the second output and provide the amplified third output voltage back to the driver circuit.

22. The apparatus of claim 21, further comprising a periphery device, wherein the first output is configured to power the periphery device.

23. The apparatus of claim 21, further comprising a memory device, wherein the first output is configured to bias a bit line of the memory device.

24. The apparatus of claim 23, wherein the memory device is a dynamic random-access memory (DRAM) device.

25. The apparatus of claim 21, wherein the amplifier comprises a differential amplifier, and wherein the differential amplifier is configured such that:

a first input of the differential amplifier receives the third output voltage; and

a second input of the differential amplifier receives a temperature-independent voltage reference.

26. The apparatus of claim 25, configured such that the third output voltage at the second output changes proportionally to the first or second output voltage provided at the first output.

27. The apparatus of claim 25, wherein the differential amplifier is configured to be activated.

28. The apparatus of claim 21, wherein the first temperature threshold value is programmable.

29. The apparatus of claim 21, wherein the first temperature-sensing circuit is further configured to provide the first temperature indication based on a first temperature hysteresis value.

30. The apparatus of claim 29, wherein the first temperature hysteresis value is programmable.

31. The apparatus of claim 21, further comprising a second temperature-sensing circuit configured to provide a second temperature indication based on a second temperature threshold value, wherein the driver circuit is further configured to:

receive the second temperature indication;

provide a fourth output voltage to the first output if the second temperature indication is in a third state; and

provide a fifth output voltage to the first output if the second temperature indication is in a fourth state.

32. The apparatus of claim 21, wherein the driver circuit further comprises a variable resistor configured to receive the first temperature indication.

33. A dynamic random-access memory (DRAM) device comprising:

a refresh module configured to;

provide a first refresh frequency at a first temperature;

provide a second refresh frequency at a second temperature; and

provide a third refresh frequency at a third temperature;

wherein;

the second temperature is greater than the first temperature;

the second refresh frequency is greater than the first refresh frequency;

the third refresh frequency is less than the first refresh frequency; and

the third temperature is between the first temperature and the second temperature.

34. The DRAM device of claim 33, further comprising a first temperature-sensing circuit configured to provide an indication of the first temperature to the refresh module based on a first temperature threshold value.

35. The DRAM device of claim 34, further comprising a second temperature-sensing circuit configured to provide an indication of the second temperature to the refresh module based on a second temperature threshold value.

36. The DRAM device of claim 35, wherein the refresh module comprises a counter for setting frequencies, and wherein a first count value of the counter is associated with the indication of the first temperature and a second count value of the counter is associated with the indication of the second temperature.

37. The DRAM device of claim 34, wherein the first temperature-sensing circuit is further configured to provide the indication of the first temperature based on a first temperature hysteresis value.

38. A method comprising:

sensing a first temperature with a first temperature-sensing circuit configured to provide a first temperature indication based on a first temperature threshold value;

driving a first output of a driver circuit, wherein the first output is driven with;

a first voltage if the first temperature indication is in a first state; and

a second voltage if the first temperature indication is in a second state;

amplifying a third voltage from a second output of the driver circuit; and

providing the amplified third voltage back to the driver circuit.

39. The method of claim 38, further comprising powering a periphery device with the first or second voltage provided at the first output.

40. The method of claim 38, further comprising biasing a bit line of a memory device with the first or second voltage provided at the first output.

41. The method of claim 40, wherein the memory device is a dynamic random-access memory (DRAM) device.

42. The method of claim 38, wherein said amplifying a third voltage comprises amplifying a difference between the third voltage and a temperature-independent voltage reference.

43. The method of claim 42, wherein such that the third voltage at the second output changes proportionally to the first or second voltage provided at the first output.

44. The method of claim 38, further comprising programming the first temperature threshold value.

45. The method of claim 38, further comprising providing the first temperature indication based on a first temperature hysteresis value.

46. The method of claim 45, further comprising programming the first temperature hysteresis value.

47. The method of claim 38, further comprising:

sensing a second temperature with a second temperature-sensing circuit configured to provide a second temperature indication based on a second temperature threshold value; and

driving the first output of the driver circuit, wherein the first output is driven with;

a fourth voltage if the second temperature indication is in a third state; and

a fifth voltage if the second temperature indication is in a fourth state.

48. The method of claim 38, wherein the driver circuit comprises a variable resistor configured to receive the first temperature indication.