METHOD OF FABRICATING AN ULTRA-SMALL CONDENSER MICROPHONE

• US 20110045616A1
• Filed: 11/02/2010
• Published: 02/24/2011
• Est. Priority Date: 11/16/2007
• Status: Active Grant

• Current Assignee: TDK Corporation
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: Doi, Kazumoto, Iwaseki, Hiroaki, MIYASHITA, Yoshiyuki, Imai, Tadao
• Granted Patent: US 8,114,700 B2
• Time in Patent Office: Days
• US Class Current: 438/17
• CPC Class Codes: H04R 19/005 using semiconductor materials
• CPC Class Codes: Y10T 29/49005 Acoustic transducer

Abstract

In the present invention, a semiconductor substrate wherein a plurality of MEMS microphones is formed is disposed opposed to a discharge electrode in a state of being stuck on a sheet. Electretization of a dielectric film provided in the MEMS microphone is performed by irradiating the dielectric film between a fixed electrode and a vibration film provided in the MEMS microphone with ions resulting from a corona discharge of the discharge electrode in a state that a predetermined potential difference is applied to the fixed electrode and the vibration film and fixing charges based on the ions to the dielectric film. The electretization is successively performed to each MEMS microphone on the semiconductor substrate by relatively moving the semiconductor substrate and the discharge electrode. Therefore, electretization of the dielectric film in the MEMS microphone chip is realized using a low-cost and simple fabricating equipment and productivity can be enhanced.

Claims

1-47. -47. (canceled)

48. A method of fabricating a condenser microphone, comprising the steps of:

forming a plurality of condenser microphones, each of the condenser microphones including a semiconductor substrate, a fixed electrode arranged opposite a vibration electrode via a space and a dielectric film arranged between the fixed and vibration electrodes, the fixed electrode and the vibration electrode being disposed on the semiconductor substrate;

sticking a sheet on a first surface of the semiconductor substrate, the first surface being opposite to a second surface on which the vibration electrode is formed;

disposing the condenser microphone facing a discharge electrode; and

performing electretization for fixing charges in the dielectric film by irradiating the dielectric film arranged between the fixed electrode and the vibration electrode provided in a condenser microphone on the semiconductor substrate with ions generated from the discharge electrode in a state that a predetermined potential difference is given between the fixed electrode and the vibration electrode, and

wherein the electretization for the dielectric film provided in the plurality of the condenser microphones on the semiconductor substrate is successively performed by relatively moving the semiconductor substrate and the discharge electrode.

49. A method according to claim 48, further comprising a step of:

after the electretization step, inspecting an amount of charges deposited in the dielectric film provided in a first condenser microphone completed the electretization in parallel with the electretization to the dielectric film in a second condenser microphone, the first and the second condenser microphones being included in the plurality of the condenser microphones on the semiconductor substrate; and

wherein the inspection of the amount of deposited charges in the dielectric film provided in each of the plurality of the condenser microphones is successively performed by relatively moving the semiconductor substrate and the discharge electrode.

50. A method according to claim 48, wherein the semiconductor substrate and the discharge electrode move relatively in a time interval of that an amount of charges deposited in the dielectric film reaches a predetermined amount, and the electretization for the dielectric film provided in the plurality of the condenser microphones on the semiconductor substrate is performed continuously.

51. A method according to claim 49, wherein the semiconductor substrate and the discharge electrode move relatively in a time interval required for the inspection of the amount of deposited charges, and the electretization for the dielectric film provided in the plurality of the condenser microphones on the semiconductor substrate and the inspection of the amount of deposited charges in the dielectric film completed the electretization on the semiconductor substrate is performed continuously.

52. A method according to claim 49, wherein the inspecting step comprises the steps of:

changing the potential difference given between the fixed electrode and the vibration electrode in one direction within a predetermined range; and

measuring a capacitance of a condenser composed of the fixed electrode and the vibration electrode in every potential difference.

53. A method according to claim 52, wherein a potential difference of which a decreasing rate of the capacitance relative to the increase in the potential difference is maximum and a potential difference of which an increasing rate of the capacitance relative to the increase in the potential difference is maximum are obtained based on the measured capacitance, and the amount of deposited charges is inspected based on an intermediate value of the obtained respective potential differences.

54. A method according to claim 53, wherein the capacitance is measured by reducing a variation of the potential difference given between the fixed electrode and the vibration electrode around the potential difference of which the decreasing rate of the capacitance relative to the increase in the potential difference is maximum and the potential difference of which the increasing rate of the capacitance relative to the increase in the potential difference is maximum.

55. A method according to claim 53, wherein, in finishing giving the potential difference to measure the capacitance, giving the potential difference to measure the capacitance is finished after a potential difference corresponding to the intermediate value is given to the fixed electrode and the vibration electrode.

56. A method according to claims 52, wherein, in giving the potential difference to measure the capacitance, the same potential given to the fixed electrode is applied to the semiconductor substrate supporting an outer edge of the vibration electrode.

57. A method according to claim 49, wherein at least one or more condenser microphone chips are interposed between a condenser microphone to be electretized and a condenser microphone to be inspected the amount of deposited charges in parallel with the electretization on the semiconductor substrate.

58. A method according to claim 48, wherein the discharge electrode is a needle electrode.

59. A method according to claim 49, wherein the discharge electrode is a needle electrode.

60. A method according to claims 48, wherein the condenser microphone to be electretized is selected by giving the potential difference between the fixed electrode and the vibration electrode and a time to electretize is adjusted with a time to give the potential difference.

61. A method according to claim 49, wherein the condenser microphone to be electretized is selected by giving the potential difference between the fixed electrode and the vibration electrode and a time to electretize is adjusted with a time to give the potential difference.

62. A method according to claim 48, wherein static electricity is removed by giving a ground potential to the fixed electrode and the vibration electrode before giving the potential difference between the fixed electrode and the vibration electrode.

63. A method according to claim 49, wherein static electricity is removed by giving a ground potential to the fixed electrode and the vibration electrode before giving the potential difference between the fixed electrode and the vibration electrode.

64. A method according to claim 48, wherein the predetermined potential difference is given between the fixed electrode and the vibration electrode through probe pins.

65. A method according to claim 49, wherein the predetermined potential difference is given between the fixed electrode and the vibration electrode through probe pins.

66. A method according to claim 49, wherein the inspection of the amount of deposited charges is performed through probe pins.

67. A method according to claim 64, wherein irradiation with the ions on the dielectric film provided in a condenser microphone except for a condenser microphone to be electretized is avoided by using a cover having conductivity provided in a probe card supporting the probe pins and connected to a ground potential through a high resistance.

68. A method according to claim 67, wherein frosted black coating is applied to a surface of the cover opposed to the semiconductor substrate.

69. A method according to claim 64, wherein the probe pins are set through portions except for above the fixed electrode provided in the condenser microphone to be electretized.

70. A method according to claim 64, an ion-shielding shutter having conductivity connected to a ground potential opens/closes a path of ions resulting from the discharge electrode to the semiconductor substrate.

71. A method according to claim 48, further comprising the step of:

separating the semiconductor substrate stuck on the sheet into pieces on the sheet; and

wherein the electretization is performed in a state that the pieces are held together by the sheet.

72. A method according to claim 49, further comprising the step of:

separating the semiconductor substrate stuck on the sheet into pieces on the sheet; and

wherein the electretization is performed in a state that the pieces are held together by the sheet.

73. A method according to claim 48, wherein the discharge electrode is arranged in a wafer prober, and the semiconductor substrate wherein the plurality of the condenser microphone is formed is disposed on a stage provided in the wafer prober.

74. A method according to claim 49, wherein the discharge electrode is arranged in a wafer prober, and the semiconductor substrate wherein the plurality of the condenser microphone is formed is disposed on a stage provided in the wafer prober.

75. A method according to claim 48, wherein a distance between the semiconductor substrate and the discharge electrode is adjustable.

76. A method according to claim 49, wherein a distance between the semiconductor substrate and the discharge electrode is adjustable.

77. A method according to claim 75, wherein the distance between the semiconductor substrate and the discharge electrode is adjusted based on a scale which specifies a position of the discharge electrode.