TRANSISTOR STRUCTURE HAVING A TRENCH DRAIN
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Abstract
A semiconductor device is formed having a trench adjacent to a current carrying region of the device. The trench is formed having a depth greater than the depth of a tub region of the device. Increasing the trench depth moves a region of higher field strength from the tub region to a region along the trench. The region along the trench does not have a junction and may withstand the higher field strength.
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Citations
23 Claims
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1-18. -18. (canceled)
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19. A method to achieve planar breakdown in a drain region of a transistor, the method comprising:
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forming a tub region that includes a channel region of the transistor to a first depth where the tub region is an opposite conductivity type as the drain region; forming a trench in the drain region of the transistor to a second depth; and forming a dielectric layer overlying the trench where the trench second depth is greater than the tub region the first depth to reduce a field strength in proximity to the tub region whereby a voltage breakdown of the transistor is increased. - View Dependent Claims (20, 21, 22, 23)
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Specification