REMOTE PLASMA SOURCE SEASONING
First Claim
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1. A method of forming a silicon-containing layer on a surface of a substrate within a processing region, the method comprising:
- cleaning an interior surface of a remote plasma region, wherein the cleaning operation comprises;
flowing a cleaning gas into the remote plasma region, and forming a cleaning plasma in the remote plasma region; and
treating the interior surface, wherein the treating operation comprises;
flowing a first silicon-containing precursor into the remote plasma region, andforming a treatment plasma in the remote plasma region to deposit a protective silicon-containing film on the interior surface.
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Abstract
Methods of seasoning a remote plasma system are described. The methods include the steps of flowing a silicon-containing precursor into a remote plasma region to deposit a silicon containing film on an interior surface of the remote plasma system. The methods reduce reactions with the seasoned walls during deposition processes, resulting in improved deposition rate, improved deposition uniformity and reduced defectivity during subsequent deposition.
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Citations
23 Claims
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1. A method of forming a silicon-containing layer on a surface of a substrate within a processing region, the method comprising:
cleaning an interior surface of a remote plasma region, wherein the cleaning operation comprises; flowing a cleaning gas into the remote plasma region, and forming a cleaning plasma in the remote plasma region; and treating the interior surface, wherein the treating operation comprises; flowing a first silicon-containing precursor into the remote plasma region, and forming a treatment plasma in the remote plasma region to deposit a protective silicon-containing film on the interior surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of treating an aluminum-containing interior surface of a remote plasma source prior to depositing a silicon-containing layer on a substrate within a processing region, the method comprising:
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flowing a halogen-containing gas into the remote plasma region; forming a cleaning plasma in the remote plasma region which results in exposed portions of the aluminum-containing interior surface; flowing a first silicon-containing precursor into the remote plasma region; and forming a treatment plasma in the remote plasma region to deposit a silicon-containing film on the aluminum-containing interior surface. - View Dependent Claims (16, 17, 18, 19)
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20. A method of forming a silicon oxide layer on the surface of a substrate within a processing region, the method comprising:
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cleaning an interior surface of a plasma region, wherein the cleaning operation comprises; flowing a cleaning gas into the plasma region, and forming a cleaning plasma in the plasma region; seasoning the interior surface of the plasma region, wherein the treating operation comprises; flowing a first silicon-containing precursor into the plasma region, and forming a seasoning plasma in the plasma region to deposit a protective silicon-containing film on the interior surface; and depositing the silicon oxide layer on the substrate, wherein the depositing operation comprises; flowing an oxygen-containing precursor into the plasma region, forming a deposition plasma in the plasma region, flowing deposition plasma effluents into the processing region, flowing a second silicon-containing precursor into the processing region, and forming the silicon oxide film from the deposition plasma effluents and the second silicon-containing precursor. - View Dependent Claims (21, 22, 23)
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Specification