LOW-K DIELECTRICS OBTAINABLE BY TWIN POLYMERIZATION
First Claim
1. A dielectric layer with a permittivity of 3.5 or less comprising a dielectric obtained by a process comprising polymerizing at least one twin monomer comprisinga) a first monomer unit which comprises a metal or semimetal, andb) a second monomer unit which is connected to the first monomer unit via a chemical bond,wherein the polymerization involves polymerizing the twin monomer with breakage of the chemical bond and formation of a first polymer comprising the first monomer unit and of a second polymer comprising the second monomer unit, and wherein the first and the second monomer unit polymerize via a common mechanism.
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Abstract
The invention relates to a dielectric layer with a permittivity of 3.5 or less comprising a dielectric obtainable by polymerizing at least one twin monomer comprising
- a) a first monomer unit which comprises a metal or semimetal, and
- b) a second monomer unit which is connected to the first monomer unit via a chemical bond,
wherein the polymerization involves polymerizing the twin monomer with breakage of the chemical bond and formation of a first polymer comprising the first monomer unit and of a second polymer comprising the second monomer unit, and wherein the first and the second monomer unit polymerize via a common mechanism.
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Citations
20 Claims
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1. A dielectric layer with a permittivity of 3.5 or less comprising a dielectric obtained by a process comprising polymerizing at least one twin monomer comprising
a) a first monomer unit which comprises a metal or semimetal, and b) a second monomer unit which is connected to the first monomer unit via a chemical bond, wherein the polymerization involves polymerizing the twin monomer with breakage of the chemical bond and formation of a first polymer comprising the first monomer unit and of a second polymer comprising the second monomer unit, and wherein the first and the second monomer unit polymerize via a common mechanism.
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15. The use of a composition comprising at least one twin monomer comprising
a) a first monomer unit which comprises a metal or semimetal, and b) a second monomer unit which is connected to the first monomer unit via a chemical bond, for producing dielectric layers with a permittivity of 3.5 on semiconductor substrates, the twin monomer being polymerizable with breakage of the chemical bond and formation of a first polymer comprising the first monomer unit and of a second polymer comprising the second monomer unit, and the first and the second monomer unit being polymerizable via a common mechanism.
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17. A process for producing semiconductor components comprising at least one dielectric layer with a permittivity of less than 3.5, wherein
a) at least one twin monomer comprising a first monomer unit which comprises a metal or semimetal, and a second monomer unit which is connected to the first monomer unit via a chemical bond, is applied to a semiconductor substrate, and b) the at least one organometallic compound is polymerized with breakage of the chemical bond and formation of a first polymer comprising the first monomer unit and of a second polymer comprising the second monomer unit, and wherein the first and the second monomer unit polymerize by the same mechanism.
Specification