LOW-K DIELECTRICS OBTAINABLE BY TWIN POLYMERIZATION

• US 20110046314A1
• Filed: 04/28/2009
• Published: 02/24/2011
• Est. Priority Date: 04/28/2008
• Status: Active Grant

• Current Assignee: BASF SE
• Original Assignee: BASF SE
• Inventors: Lange, Arno, Haehnle, Hans-Joachim, Klipp, Andreas
• Granted Patent: US 8,476,368 B2
• Time in Patent Office: Days
• US Class Current: 525/389
• CPC Class Codes: C08G 77/00 Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
• CPC Class Codes: C08J 2383/00 Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
• CPC Class Codes: C08J 9/26 by elimination of a solid phase from a macromolecular composition or article, e.g. leaching out
• CPC Class Codes: H01B 3/441 from alkenes

Abstract

The invention relates to a dielectric layer with a permittivity of 3.5 or less comprising a dielectric obtainable by polymerizing at least one twin monomer comprising

• a) a first monomer unit which comprises a metal or semimetal, and
• b) a second monomer unit which is connected to the first monomer unit via a chemical bond,
  wherein the polymerization involves polymerizing the twin monomer with breakage of the chemical bond and formation of a first polymer comprising the first monomer unit and of a second polymer comprising the second monomer unit, and wherein the first and the second monomer unit polymerize via a common mechanism.

Claims

1. A dielectric layer with a permittivity of 3.5 or less comprising a dielectric obtained by a process comprising polymerizing at least one twin monomer comprising

a) a first monomer unit which comprises a metal or semimetal, and

b) a second monomer unit which is connected to the first monomer unit via a chemical bond,

wherein the polymerization involves polymerizing the twin monomer with breakage of the chemical bond and formation of a first polymer comprising the first monomer unit and of a second polymer comprising the second monomer unit, and wherein the first and the second monomer unit polymerize via a common mechanism.

2. The dielectric layer according to claim 1, wherein the metal or semimetal is Si, B, Ti, Zr or Hf.

3. The dielectric layer according to claim 1, wherein the first polymer is essentially inorganic and the second polymer is essentially organic.

4. The dielectric layer according to claim 1, wherein the first monomer unit and the second monomer unit polymerize anionically, cationically or free-radically.

5. The dielectric layer according to claim 1, wherein the permittivity is 3.0 or less.

6. The dielectric layer according to claim 1, wherein the second polymer is removed thermally, oxidatively or thermally and oxidatively.

7. The dielectric layer according to claim 1, wherein the second monomer unit is a

8. The dielectric layer according to claim 1, wherein the second monomer unit is a

9. The dielectric layer according to claim 7, wherein at least two of the A¹, A², A³ and, where present, A⁴ radicals are joined to one another.

10. The dielectric layer according to claim 7, wherein one or more carbon atoms of the A¹, A², A³ and, where present, A⁴ radicals are independently replaced by heteroatoms.

11. The dielectric layer according to claim 7, wherein A¹, A², A³ and, where present, A⁴ are each independently one or more functional groups, selected from the group consisting of a halogen, CN and NR2, wherein where in NR2 R is H, an aliphatic hydrocarbon, or an aromatic hydrocarbon.

12. The dielectric layer according to claim 7, wherein A¹ and A³ are each H.

13. The dielectric layer according to claim 1, wherein the dielectric is obtained by a process comprising twin polymerizing at least one organosilicon compound represented by formula (IIa)

14. The dielectric layer according to claim 1, wherein the dielectric is obtained by a process comprising twin polymerizing at least one organosilicon compound of the formula (IIb)

16. A semiconductor component comprising a dielectric layer according to claim 1.

18. The dielectric layer according to claim 10, wherein the heteroatom is selected from the group consisting of O, S and N.

19. The dielectric layer of claim 11, wherein the halogen is Br or Cl.

20. The dielectric layer according to claim 11, wherein R is H, methyl, ethyl, or phenyl.

15. The use of a composition comprising at least one twin monomer comprising

a) a first monomer unit which comprises a metal or semimetal, and

b) a second monomer unit which is connected to the first monomer unit via a chemical bond,

for producing dielectric layers with a permittivity of 3.5 on semiconductor substrates, the twin monomer being polymerizable with breakage of the chemical bond and formation of a first polymer comprising the first monomer unit and of a second polymer comprising the second monomer unit, and the first and the second monomer unit being polymerizable via a common mechanism.

17. A process for producing semiconductor components comprising at least one dielectric layer with a permittivity of less than 3.5, wherein

a) at least one twin monomer comprising a first monomer unit which comprises a metal or semimetal, and a second monomer unit which is connected to the first monomer unit via a chemical bond, is applied to a semiconductor substrate, and

b) the at least one organometallic compound is polymerized with breakage of the chemical bond and formation of a first polymer comprising the first monomer unit and of a second polymer comprising the second monomer unit, and wherein the first and the second monomer unit polymerize by the same mechanism.