INSULATING FILM, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE

• US 20110048769A1
• Filed: 08/30/2010
• Published: 03/03/2011
• Est. Priority Date: 09/01/2009
• Status: Abandoned Application

• Current Assignee: Elpida Memory Incorporated (Micron Technology, Inc.)
• Original Assignee: Elpida Memory Incorporated (Micron Technology, Inc.)
• Inventors: FUJIWARA, Naonori
• Application Number:
  US12/871,400
• Publication Number:
  US 20110048769A1
• Time in Patent Office: Days
• US Class Current: 174/137.B
• CPC Class Codes: H01B 3/12 ceramics
• CPC Class Codes: H01G 4/1236 based on zirconium oxides or zirconates H01G4/1263 takes precedence
• CPC Class Codes: H01G 4/33 Thin- or thick-film capacitors thin- or thick-film circuits H01L27/00; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor H01L28/40
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02186 the material containing titanium, e.g. TiO2
• CPC Class Codes: H01L 21/02189 the material containing zirconium, e.g. ZrO2
• CPC Class Codes: H01L 21/02194 the material containing more than one metal element
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 28/91 made by depositing layers, e.g. by depositing alternating conductive and insulating layers
• CPC Class Codes: H01L 29/40114 the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/7881 Programmable transistors with only two possible levels of programmation H01L29/7888 takes precedence
• CPC Class Codes: H10B 12/033 the capacitor extending over the transistor

Abstract

An exemplary aspect of the invention provides an insulating film which has a high dielectric constant and has small leakage current even when it is sandwiched between electrodes. The insulating film comprises two zirconium oxide layers in crystallized state; and an intergranular isolating layer composed of an amorphous material having a dielectric constant higher than that of zirconium oxide in crystallized state; wherein the intergranular isolating layer is sandwiched between the two zirconium oxide layers. The insulating film is properly used as a capacitive insulating film in a semiconductor device comprising a memory cell including a capacitor element having the capacitive insulating film between an upper electrode and a lower electrode, or as an intergate insulating film in a semiconductor device comprising a nonvolatile memory device having the intergate insulating film between a control gate electrode and a floating gate electrode.

Claims

1. An insulating film comprising:

two zirconium oxide layers in crystallized state; and

an intergranular isolating layer composed of an amorphous material having a dielectric constant higher than that of zirconium oxide in crystallized state;

wherein the intergranular isolating layer is sandwiched between the two zirconium oxide layers.

2. The insulating film according to claim 1, wherein the intergranular isolating layer comprises a metal oxide containing titanium and aluminum.

3. The insulating film according to claim 1, wherein the intergranular isolating layer is a TiAlO layer.

4. The insulating film according to claim 3, wherein the content of aluminum oxide component in the intergranular isolating layer is 5 to 15 atomic %.

5. The insulating film according to claim 1, wherein the zirconium oxide is in crystallized state of a tetragonal structure.

6. The insulating film according to claim 1, wherein the intergranular isolating layer has a thickness of from 0.5 nm to 1.0 nm.

7. The insulating film according to claim 6, wherein the insulating film has an effective oxide thickness (EOT) of from 0.65 to 0.8 nm.

8. The insulating film according to claim 1, wherein the intergranular isolating layer comprises a metal oxide including at least one of Hf, La, Ta and Y.

9. The insulating film according to claim 3, wherein one of the zirconium oxide layers is disposed on a conductive material.

10. An insulating film comprising:

three zirconium oxide layers in crystallized state; and

two intergranular isolating layers composed of an amorphous material having a dielectric constant higher than that of zirconium oxide in crystallized state;

wherein each of the intergranular isolating layers is sandwiched between two of the three zirconium oxide layers.

11. The insulating film according to claim 10, wherein each of the intergranular isolating layers is a TiAlO layer.

12. The insulating film according to claim 11, wherein the content of aluminum oxide component in each of the intergranular isolating layers is 5 to 15 atomic %.

13. A method of manufacturing an insulating film, comprising:

forming a first zirconium oxide layer in amorphous state;

forming an intergranular isolating layer in amorphous state on the first zirconium oxide layer;

forming a second zirconium oxide layer in amorphous state on the intergranular isolating layer; and

annealing a stack of layers including the first and the second zirconium oxide layers and the intergranular isolating layer to crystallize zirconium oxide in amorphous state in the first and second zirconium oxide layers,

wherein after the annealing has been performed, the intergranular isolating layer is in amorphous state, and the intergranular isolating layer has a dielectric constant higher than that of zirconium oxide in crystallized state in the first and the second zirconium oxide layers.

14. The method according to claim 13, wherein the intergranular isolating layer comprises a metal oxide containing titanium and aluminum.

15. The method according to claim 13, wherein the intergranular isolating layer is a TiAlO layer.

16. The method according to claim 15, wherein the content of aluminum oxide component in the intergranular isolating layer is 5 to 15 atomic %.

17. The method according to claim 13, wherein each of the zirconium oxide in the first and the second zirconium oxide layers is in a crystallized state of a tetragonal structure after the annealing has been performed.

18. The method according to claim 13, wherein the intergranular isolating layer is formed such as having a thickness of from 0.5 nm to 1.0 nm.

19. The method according to claim 18, wherein the stack of layers are formed such as having an effective oxide thickness (EOT) of from 0.65 to 0.8 nm after the annealing has been performed.