THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
First Claim
Patent Images
1. A manufacturing method for thin film transistors, comprising:
- forming a sacrifice layer comprised of a metal oxide semiconductor over a conductive layer comprised of a metal oxide semiconductor;
forming a metal film over the sacrifice layer;
processing the metal film by dry etching; and
carrying out wet etching on the sacrifice layer exposed by the dry etching.
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Accused Products
Abstract
In a manufacturing method for thin film transistors, the following procedure is taken: a sacrifice layer comprised of a metal oxide semiconductor is formed over a conductive layer comprised of a metal oxide semiconductor; a metal film is formed over the sacrifice layer; the metal film is processed by dry etching; and the portion of the sacrifice layer exposed by this dry etching is subjected to wet etching.
52 Citations
15 Claims
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1. A manufacturing method for thin film transistors, comprising:
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forming a sacrifice layer comprised of a metal oxide semiconductor over a conductive layer comprised of a metal oxide semiconductor; forming a metal film over the sacrifice layer; processing the metal film by dry etching; and carrying out wet etching on the sacrifice layer exposed by the dry etching. - View Dependent Claims (2, 3, 4, 5)
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6. A manufacturing method for thin film transistors, comprising:
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forming an etch stopper layer comprised of a metal oxide semiconductor over a conductive layer comprised of a metal oxide semiconductor; forming a sacrifice layer comprised of a metal oxide semiconductor over the etch stopper layer; forming a metal film over the sacrifice layer; processing the metal film by dry etching; and carrying out wet etching on the sacrifice layer exposed by the dry etching. - View Dependent Claims (7, 8, 9, 10)
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11. A thin film transistor manufactured by:
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forming a sacrifice layer comprised of a metal oxide semiconductor over a conductive layer comprised of a metal oxide semiconductor; forming a metal film over the sacrifice layer; processing the metal film by dry etching; and carrying out wet etching on the sacrifice layer exposed by the dry etching. - View Dependent Claims (12, 13, 14, 15)
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Specification