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THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

  • US 20110049508A1
  • Filed: 07/27/2010
  • Published: 03/03/2011
  • Est. Priority Date: 09/03/2009
  • Status: Active Grant
First Claim
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1. A manufacturing method for thin film transistors, comprising:

  • forming a sacrifice layer comprised of a metal oxide semiconductor over a conductive layer comprised of a metal oxide semiconductor;

    forming a metal film over the sacrifice layer;

    processing the metal film by dry etching; and

    carrying out wet etching on the sacrifice layer exposed by the dry etching.

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