FIELD EFFECT TRANSISTOR, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
First Claim
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1. A field effect transistor comprising a source electrode, a drain electrode, a gate electrode, an insulating film and a semiconductor layer containing a crystalline oxide, wherein the source electrode and the drain electrode are self-aligned with the gate electrode with the insulating film therebetween.
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Abstract
A field effect transistor including a source electrode 107a, a drain electrode 107b, a gate electrode 103, an insulating film 105 and a semiconductor layer 109 containing a crystalline oxide, wherein the source electrode 107a and the drain electrode 107b are self-aligned with the gate electrode 103 with the insulating film 105 therebetween.
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Citations
15 Claims
- 1. A field effect transistor comprising a source electrode, a drain electrode, a gate electrode, an insulating film and a semiconductor layer containing a crystalline oxide, wherein the source electrode and the drain electrode are self-aligned with the gate electrode with the insulating film therebetween.
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11. A method for producing a bottom-gate type field effect transistor comprising:
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forming a gate electrode; forming an insulating film on the gate electrode; forming a conductive amorphous oxide film on the insulating film; and heating the gate electrode using as a mask a pattern of the gate electrode to crystallize a part of the conductive amorphous oxide film which overlaps the gate electrode to allow it to be semiconductive, and to form the source electrode and the drain electrode from a part of the conductive amorphous oxide film which does not overlap the gate electrode.
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12. A method for producing a bottom-gate type field effect transistor comprising:
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forming a gate electrode; forming an insulating film on the gate electrode; forming a conductive amorphous oxide film on the insulating film; heating the conductive amorphous oxide film so that the oxide film is crystallized to be semiconductive; and forming a source electrode and a drain electrode using as a mask a pattern of the gate electrode.
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13. A method for producing a top-gate type field effect transistor comprising:
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forming a conductive amorphous oxide film; forming an insulating film on the conductive amorphous oxide film; forming a gate electrode on the insulating film; and heating the gate electrode using as a mask a pattern of the gate electrode to crystallize a part of the conductive amorphous oxide film which overlaps the gate electrode to allow it to be semiconductive, and to form the source electrode and the drain electrode from a part of the conductive amorphous oxide film which does not overlap the gate electrode.
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14. A method for forming a top-gate type field effect transistor comprising:
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forming a source electrode and a drain electrode; forming a conductive amorphous oxide film on the source electrode and the drain electrode; forming an insulating film on the conductive amorphous oxide film; forming a gate electrode on the insulating film using as a mask patterns of the source electrode and the drain electrode; and heating the conductive amorphous oxide film so that the oxide film is crystallized to be semiconductive.
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15. A method for producing a field effect transistor comprising a step of heating the gate electrode to 200 to 1400°
- C. and, by using heat transmitted from the gate electrode, subjecting at least part of a conductive amorphous oxide film to solid-phase crystallization to allow it to be semiconductive.
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