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FIELD EFFECT TRANSISTOR, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

  • US 20110049511A1
  • Filed: 01/16/2009
  • Published: 03/03/2011
  • Est. Priority Date: 01/17/2008
  • Status: Active Grant
First Claim
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1. A field effect transistor comprising a source electrode, a drain electrode, a gate electrode, an insulating film and a semiconductor layer containing a crystalline oxide, wherein the source electrode and the drain electrode are self-aligned with the gate electrode with the insulating film therebetween.

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