SEMICONDUCTOR DEVICE INCLUDING A TRANSISTOR, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a gate electrode layer provided over a substrate;
a gate insulating film provided over the gate electrode layer;
a semiconductor layer provided over the gate insulating film, the semiconductor layer overlapping with the gate electrode layer;
a carbide layer provided over and in contact with the semiconductor layer;
a source electrode layer electrically connected to the semiconductor layer; and
a drain electrode layer electrically connected to the semiconductor layer.
1 Assignment
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Accused Products
Abstract
An object is to prevent contamination of a semiconductor film in a transistor or a semiconductor device including the transistor. Another object is to suppress variation in electrical characteristics and deterioration. A transistor including: a gate electrode layer provided over a substrate; a gate insulating film provided over the gate electrode layer; a semiconductor layer which is provided over the gate insulating film and which overlaps the gate electrode layer; a carbide layer provided over and in contact with a surface of the semiconductor layer; and a source electrode layer and a drain electrode layer which are electrically connected to the semiconductor layer is provided.
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Citations
22 Claims
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1. A semiconductor device comprising:
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a gate electrode layer provided over a substrate; a gate insulating film provided over the gate electrode layer; a semiconductor layer provided over the gate insulating film, the semiconductor layer overlapping with the gate electrode layer; a carbide layer provided over and in contact with the semiconductor layer; a source electrode layer electrically connected to the semiconductor layer; and a drain electrode layer electrically connected to the semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a gate electrode layer provided over a substrate; a gate insulating film provided over the gate electrode layer; a semiconductor layer provided over the gate insulating film; a source electrode layer electrically connected to the semiconductor layer; a drain electrode layer electrically connected to the semiconductor layer; and a carbide layer provided in contact with the semiconductor layer, the source electrode layer, and the drain electrode layer. - View Dependent Claims (8, 9, 10, 11)
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12. A semiconductor device comprising:
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a gate electrode layer provided over a substrate; a gate insulating film provided over the gate electrode layer; a source electrode layer provided over the gate insulating film; a drain electrode layer provided over the gate insulating film; a semiconductor layer provided over the source electrode layer, the drain electrode layer, and the gate electrode layer; a carbide layer provided over and in contact with the semiconductor layer, and wherein the gate insulating film is interposed between the gate electrode layer and the semiconductor layer. - View Dependent Claims (13, 14, 15, 16)
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17. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer over a substrate; forming a gate insulating film over the gate electrode layer; forming a semiconductor layer over the gate insulating film so as to overlap with the gate electrode layer; forming a carbide layer over the semiconductor layer; forming a source electrode layer so as to be electrically connected to the semiconductor layer; and forming a drain electrode layer so as to be electrically connected to the semiconductor layer. - View Dependent Claims (18)
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19. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer over a substrate; forming a gate insulating film over the gate electrode layer; forming a semiconductor layer over the gate insulating film so as to overlap with the gate electrode layer; forming a source electrode layer so as to be electrically connected to the semiconductor layer; forming a drain electrode layer so as to be electrically connected to the semiconductor layer; and forming a carbide film so as to cover the semiconductor layer, the source electrode layer, and the drain electrode layer. - View Dependent Claims (20)
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21. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer over a substrate; forming a gate insulating film over the gate electrode layer; forming a source electrode layer over the gate insulating film; forming a drain electrode layer over the gate insulating film; forming a semiconductor layer over the source electrode layer and the drain electrode layer; forming a carbide layer over the semiconductor layer, and wherein the gate insulating film is interposed between the gate electrode layer and the semiconductor layer. - View Dependent Claims (22)
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Specification