INTEGRATED CIRCUIT SWITCHES, DESIGN STRUCTURE AND METHODS OF FABRICATING THE SAME
First Claim
Patent Images
1. A method of manufacturing a structure, comprising:
- forming at least one tab of sacrificial material on a side of a switching device which is embedded in the sacrificial material;
depositing a cap layer over the switching device and the at least one tab;
stripping the sacrificial material through at least one opening formed in the cap layer on the at least one tab which is on the side of the switching device; and
sealing the at least one opening with an additional material.
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Abstract
Integrated MEMS switches, design structures and methods of fabricating such switches are provided. The method includes forming at least one tab of sacrificial material on a side of a switching device which is embedded in the sacrificial material. The method further includes stripping the sacrificial material through at least one opening formed on the at least one tab which is on the side of the switching device, and sealing the at least one opening with a capping material.
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Citations
25 Claims
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1. A method of manufacturing a structure, comprising:
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forming at least one tab of sacrificial material on a side of a switching device which is embedded in the sacrificial material; depositing a cap layer over the switching device and the at least one tab; stripping the sacrificial material through at least one opening formed in the cap layer on the at least one tab which is on the side of the switching device; and sealing the at least one opening with an additional material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of manufacturing a MEMS switch comprising:
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forming MEMS structures in a lower and upper cavity connected by a via and which is temporarily filled with a sacrificial material; forming a dielectric layer surrounding portions of the lower and upper cavity and over the MEMS structures; opening a vent hole in the dielectric layer on a side of the MEMS structures over the lower cavity; stripping the sacrificial material to form a void about the MEMS structures using a dry or wet etchant; and sealing the vent hole with a capping material. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A method of forming a structure, comprising:
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performing a wet etching process to strip sacrificial material that embeds a lower and an upper portion of an active device formed within a dome structure; and performing a dry etching process to strip a layer of a thin sacrificial layer deposited on a lower metal layer of the active device. - View Dependent Claims (20)
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21. A MEMS structure, comprising:
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a lower forcing electrode and a lower contact electrode, remote from the lower forcing electrode; a cantilever beam positioned above the lower forcing electrode and the lower contact electrode; and a capping layer which hermetically seals the lower forcing electrode, the lower contact electrode and the cantilever beam, the capping layer having a sealed portion positioned on a side of the lower contact electrode, remote from the lower forcing electrode and an end portion of the cantilever beam. - View Dependent Claims (22, 25)
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23. A design structure embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, the design structure comprising:
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forming at least one tab of sacrificial material on a side of a switching device which is embedded in the sacrificial material; stripping the sacrificial material through at least one opening formed on the at least one tab which is on the side of the switching device; and sealing the at least one opening with a capping material. - View Dependent Claims (24)
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Specification