SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

• US 20110049657A1
• Filed: 08/27/2010
• Published: 03/03/2011
• Est. Priority Date: 08/28/2009
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Electronics Corporation
• Inventors: Hirano, Shinya, TSUKAMOTO, Keisuke, Murata, Tatsunori, Fujiyama, Yuichiro
• Granted Patent: US 8,415,756 B2
• Time in Patent Office: Days
• US Class Current: 257/421
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

There are provided a semiconductor device in which short circuit failures in magnetic resistor elements and the like are reduced, and a method of manufacturing the same. An interlayer insulating film in which memory cells are formed is formed such that the upper surface of the portion of the interlayer insulating film located in a memory cell region where the magnetic resistor elements are formed is at a position lower than that of the upper surface of the portion of the interlayer insulating film located in a peripheral region. Another interlayer insulating film is formed so as to cover the magnetic resistor elements. In the another interlayer insulating film, formed are bit lines electrically coupled to the magnetic resistor elements. Immediately below the magnetic resistor elements, formed are digit lines.

Claims

1. A semiconductor device, comprising:

a first region and a second region defined in a main surface of a semiconductor substrate;

a first insulating film formed over the semiconductor substrate so as to cover the first region and the second region;

a plurality of first conductor formed so as to come in contact with a surface of a first portion of the first insulating film located in the first region;

a plurality of magnetic resistor elements formed at the respective first conductor;

a second insulating film formed over the first insulating film so as to fill a gap between the magnetic resistor elements adjacent to each other, and having first wire grooves; and

first wires formed in the first wire grooves, and each electrically coupled to a predetermined one of the magnetic resistor elements,

wherein a surface of the first portion of the first insulating film is at a position lower than that of a surface of a second portion of the first insulating film located in the second region.

2. A semiconductor device according to claim 1,

wherein a thickness of the first portion of the first insulating film is smaller than a thickness of the second portion of the first insulating film.

3. A semiconductor device according to claim 1,

wherein a thickness of a portion of the first insulating film exposed at an end surface of the semiconductor substrate after subjected to dicing is larger than the thickness of the first portion of the first insulating film.

4. A semiconductor device according to claim 1,

wherein the surface of the first portion of the first insulating film is smoothly coupled to a surface of the second portion of the first insulating film.

5. A semiconductor device according to claim 1,

wherein the surface of the first portion of the first insulating film is stepwise coupled to a surface of the second portion of the first insulating film.

6. A semiconductor device according to claim 1,

wherein a surface of the second insulating film is at a position higher than that of an upper surface of each of the magnetic resistor elements,

wherein openings are formed in the second insulating film to expose the magnetic resistor elements, and

wherein second conductor electrically coupling the magnetic resistor elements and the first wires are formed in the openings.

7. A semiconductor device according to claim 1,

wherein a third insulating film is formed between the second insulating film and each of the magnetic resistor elements and the corresponding one of the first conductor in such a configuration as to cover respective surfaces of the magnetic resistor element and the first conductor.

8. A semiconductor device according to claim 1,

wherein each of the magnetic resistor elements is configured such that a spin orientation therein is changed by a magnetic field produced by allowing respective currents to flow in the corresponding one of the first wires and in a second wire formed below the magnetic resistor element at a distance therefrom.

9. A semiconductor device according to claim 1,

wherein each of the magnetic resistor elements is configured such that a spin orientation therein is changed by a current allowed to flow in the magnetic resistor element via the corresponding one of the first wires.

10. A method of manufacturing a semiconductor device having a first region and a second region in a main surface of a semiconductor substrate, comprising the steps of:

forming a first insulating film over the semiconductor substrate so as to cover the first region and the second region therewith;

setting a surface of a first portion of the first insulating film located in the first region at a position lower than that of a surface of a second portion of the first insulating film located in the second region;

forming a plurality of first conductor such that each of the first conductor comes in contact with the surface of the first portion of the first insulating film;

forming a plurality of magnetic resistor elements such that the magnetic resistor elements come in contact with respective surfaces of the first conductor;

forming a second insulating film over the first insulating film so as to fill a gap between the magnetic resistor elements adjacent to each other therewith;

forming wire grooves in the second insulating film; and

forming, in the wire grooves, predetermined wires each electrically coupled to a predetermined one of the magnetic resistor elements.

11. A method of manufacturing the semiconductor device according to claim 10,

wherein, in the step of setting the surface of the first portion at the position lower than that of the surface of the second portion, the first insulating film is subjected to a polishing process to set the surface of the first portion at the position lower than that of the surface of the second portion.

12. A method of manufacturing the semiconductor device according to claim 10,

wherein, in the step of setting the surface of the first portion at the position lower than that of the surface of the second portion, the first portion is subjected to anisotropic etching to set the surface of the first portion at the position lower than that of the surface of the second portion.

13. A method of manufacturing a semiconductor device having a first region and a second region in a main surface of a semiconductor substrate, comprising the steps of:

forming a first insulating film over the semiconductor substrate so as to cover the first region and the second region therewith;

setting a surface of a first portion of the first insulating film located in the first region at a position lower than that of a surface of a second portion of the first insulating film located in the second region;

forming a plurality of first conductor such that each of the first conductor comes in contact with the surface of the first portion of the first insulating film;

forming a plurality of magnetic resistor elements such that the magnetic resistor elements come in contact with respective surfaces of the first conductor;

forming a second insulating film over the first insulating film so as to fill a gap between the magnetic resistor elements adjacent to each other therewith;

forming a silicon oxynitride film over the second insulating film;

forming a third insulating film over the silicon oxynitride film;

forming wire grooves in each of the third insulating film and the silicon oxynitride film; and

forming, in the wire grooves, predetermined wires each electrically coupled to a predetermined one of the magnetic resistor elements.