Semiconductor Component With Dielectric Layer Stack

• US 20110049667A1
• Filed: 08/25/2010
• Published: 03/03/2011
• Est. Priority Date: 08/25/2009
• Status: Active Grant

• Current Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Inventors: Werner, Wolfgang
• Granted Patent: US 9,786,659 B2
• Time in Patent Office: Days
• US Class Current: 257/503
• CPC Class Codes: H01L 23/52 Arrangements for conducting electric current within the device in operation from one component to another , i.e. interconnections, e.g. wires, lead frames optical interconnections G02B6/00
• CPC Class Codes: H01L 27/0676 comprising combinations of diodes, or capacitors or resistors
• CPC Class Codes: H01L 27/0802 Resistors only
• CPC Class Codes: H01L 27/0805 Capacitors only
• CPC Class Codes: H01L 27/0814 Diodes only

Abstract

A semiconductor component has a semiconductor body zone, a first electrically conductive layer adjacent to the semiconductor body zone, a first dielectric layer with first dielectric properties and a second dielectric layer with second dielectric properties. The first dielectric properties differ from the second dielectric properties. The first dielectric layer and the second dielectric layer are arranged between the semiconductor body zone and the first electrically conductive layer. A second electrically conductive layer is applied between the first dielectric layer and the second dielectric layer. A first voltage divider is switched between the first electrically conductive layer and the semiconductor body zone. The second electrically conductive layer is electrically conductively connected only to the voltage divider.

Claims

1. A semiconductor component, comprising:

a semiconductor body zone;

a first electrically conductive layer adjacent the semiconductor body zone;

a first dielectric layer with first dielectric properties;

a second dielectric layer with second dielectric properties;

wherein the first dielectric properties differ from the second dielectric properties and the first dielectric layer and the second dielectric layer are located between the semiconductor body zone and the first electrically conductive layer;

a second electrically conductive layer arranged between the first dielectric layer and the second dielectric layer;

a voltage divider operable to switch between the first electrically conductive layer and the semiconductor body zone; and

wherein the second electrically conductive layer is electrically conductively connected only to the voltage divider.

2. The semiconductor component according to claim 1, wherein the first dielectric layer has a thickness of 10 nm to 2 μ

m.

3. The semiconductor component according to claim 1, wherein the first dielectric layer adjoins the semiconductor body zone.

4. The semiconductor component according to claim 1, wherein the second dielectric layer has a thickness of 10 nm to 2 μ

m.

5. The semiconductor component according to claim 1, wherein the second dielectric layer adjoins the first electrically conductive layer.

6. The semiconductor component according to claim 1, wherein the first and second dielectric layers have different electrical conductivities.

7. The semiconductor component according to claim 1, wherein the first dielectric layer is composed of SiO₂ and the second dielectric layer is composed of a dielectric material different from SiO₂.

8. The semiconductor component according to claim 1, wherein at least one of the dielectric layers has a negative temperature coefficient of the relative dielectric constants ε

_r .

9. The semiconductor component according to claim 1, wherein the voltage divider is composed of at least one electrical resistance and at least one diode.

10. The semiconductor component according to claim 9, wherein the at least one electrical resistance is switched between the first electrically conductive layer and the second electrically conductive layer and the at least one diode is switched between the second electrically conductive layer and the semiconductor body zone.

11. The semiconductor component according to claim 1, wherein the voltage divider is composed of at least two electrical resistances.

12. The semiconductor component according to claim 11, wherein a first one of the at least two electrical resistances is switched between the first electrically conductive layer and the second conductive layer and a second one of the at least two electrical resistances is switched between the second electrically conductive layer and the semiconductor body zone.

13. The semiconductor component according to claim 11, wherein a first one of the at least two electrical resistances is switched between the first electrically conductive layer and the second electrically conductive layer and a second one of the at least two electrical resistances is switched between the second electrically conductive layer and a third electrically conductive layer, wherein the third conductive layer is electrically connected to the semiconductor body zone.

14. The semiconductor component according to claim 11, wherein at least one of the at least two electrical resistances is part of the first dielectric layer or the second dielectric layer.

15. The semiconductor component according to claim 1, wherein the voltage divider is composed of at least two diodes.

16. The semiconductor component according to claim 15, wherein a first one of the at least two diodes is switched between the first electrically conductive layer and the second electrically conductive layer and a second one of the at least two diodes is switched between the second electrically conductive layer and the semiconductor body zone.

17. The semiconductor component according to claim 1, wherein the semiconductor body zone is a channel zone of an MOS transistor.

18. The semiconductor component according to claim 1, wherein the second electrically conductive layer has a thickness of 10 nm to 100 nm.