Front Side Copper Post Joint Structure for Temporary Bond in TSV Application

• US 20110049706A1
• Filed: 07/07/2010
• Published: 03/03/2011
• Est. Priority Date: 09/03/2009
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Hsu, Kuo-Ching, Hsiao, Ching-Wen, Chen, Chen-Shien, Huang, Hon-Lin
• Granted Patent: US 8,736,050 B2
• Time in Patent Office: Days
• US Class Current: 257/737
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2224/0361 Physical or chemical etching
• CPC Class Codes: H01L 2224/03912 the bump being used as a mask for patterning the bonding area
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/05558 conformal layer on a patterned surface
• CPC Class Codes: H01L 2224/05572 the external layer extending out of an opening
• CPC Class Codes: H01L 2224/1147 using a lift-off mask
• CPC Class Codes: H01L 2224/11823 Immersion coating, e.g. in a solder bath
• CPC Class Codes: H01L 2224/11849 Reflowing
• CPC Class Codes: H01L 2224/119 Methods of manufacturing bump connectors involving a specific sequence of method steps
• CPC Class Codes: H01L 2224/11912 the bump being used as a mask for patterning other parts
• CPC Class Codes: H01L 2224/13027 the bump connector being offset with respect to the bonding area, e.g. bond pad
• CPC Class Codes: H01L 2224/13083 Three-layer arrangements
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/13562 : On the entire exposed surface of the core
• CPC Class Codes: H01L 2224/1357 : Single coating layer
• CPC Class Codes: H01L 2224/13611 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/818 : Bonding techniques
• CPC Class Codes: H01L 23/3157 : Partial encapsulation or coating mask layer used as insulation layer H01L21/31
• CPC Class Codes: H01L 23/481 : Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19041 : being a capacitor

Abstract

An integrated circuit structure includes a semiconductor substrate; a conductive via (TSV) passing through the semiconductor substrate; and a copper-containing post overlying the semiconductor substrate and electrically connected to the conductive via.

Claims

1. An integrated circuit structure comprising:

a semiconductor substrate;

a conductive via (TSV) passing through the semiconductor substrate; and

a copper-containing post overlying the semiconductor substrate and electrically connected to the conductive via.

2. The integrated circuit structure of claim 1 further comprising:

a conductive barrier over the copper-containing post; and

a solder over the conductive barrier.

3. The integrated circuit structure of claim 1 further comprising a metallic layer on the copper-containing post, wherein the metallic layer comprises a first portion directly over the copper-containing post, and a second portion on a sidewall of the copper-containing post.

4. The integrated circuit structure of claim 1 further comprising:

an under-bump-metallurgy (UBM) formed between the copper-containing post and the semiconductor substrate;

a metal pad underlying and connected to the UBM; and

a dielectric buffer layer over the metal pad, wherein the metal pad is connected to the UBM through a conductive feature in the dielectric buffer layer.

5. The integrated circuit structure of claim 4 further comprising:

an interconnect structure comprising copper underlying and connected to the UBM; and

a polyimide layer comprising a portion level with the interconnect structure, wherein the UBM comprises an extension extending into the polyimide layer and contacting the interconnect structure.

6. The integrated circuit structure of claim 1, wherein the copper-containing post has a thickness less than about 60 μ

m.

7. An integrated circuit structure comprising:

a semiconductor substrate;

a conductive via extending from a front surface to a back surface of the semiconductor substrate;

an interconnect structure overlying the front surface of the semiconductor substrate, wherein the interconnect structure comprises copper; and

a copper-containing post overlying the front surface of the semiconductor substrate and electrically connected to the conductive via and the interconnect structure.

8. The integrated circuit structure of claim 7, wherein a thickness of the copper-containing post is between about 55 μ

m and about 30 μ

m.

9. The integrated circuit structure of claim 7 further comprising:

an aluminum-containing pad over the semiconductor substrate and electrically connected to the conductive via;

an under-bump-metallurgy (UBM) over and connected to the aluminum-containing pad; and

a polyimide layer over the aluminum-containing pad and under a portion of the UBM, wherein the UBM comprises an extension extending into the polyimide layer and electrically connected to the aluminum-containing pad.

10. The integrated circuit structure of claim 7 further comprising:

a conductive barrier over the copper-containing post; and

a solder over the conductive barrier.

11. The integrated circuit structure of claim 7 further comprising a metal finish on the copper-containing post, wherein the metal finish comprises a first portion directly over the copper-containing post, and a second portion on a sidewall of the copper-containing post.

12. The integrated circuit structure of claim 11, wherein the metal finish comprises a metal selected from the group consisting essentially of tin, nickel, palladium, gold, and combinations thereof.

13. An integrated circuit structure comprising:

a semiconductor substrate;

a conductive via extending from a front surface to a back surface of the semiconductor substrate;

a copper-containing post over the semiconductor substrate and electrically connected to the conductive via; and

a conductive barrier over the copper-containing post, wherein the conductive barrier, the copper-containing post, and the conductive via are electrically connected.

14. The integrated circuit structure of claim 13 further comprising:

an interconnect structure over the semiconductor substrate and electrically connected to the conductive via, wherein the interconnect structure comprises copper; and

a dielectric buffer layer comprising a first portion level with the interconnect structure, and a second portion over the interconnect structure.

15. The integrated circuit structure of claim 14 further comprising an under-bump-metallurgy (UBM) comprising a first portion in the dielectric buffer layer, and a second portion over the second portion of the dielectric buffer layer, wherein the UBM is electrically connected to the conductive via.

16. The integrated circuit structure of claim 13 further comprising a solder over the conductive barrier.