METHOD TO PERFORM ELECTRICAL TESTING AND ASSEMBLY OF ELECTRONIC DEVICES
First Claim
1. A method, comprising:
- performing electrical wafer testing and assembly of a first electronic device on a wafer, the first electronic device including an insulating layer on the wafer, a passivation layer covering the insulating layer, and a first pad made in the insulating layer, the performing including;
providing said first electronic device with an extended metallization layer extending on said passivation layer from said first pad to a non-active area of said wafer;
connecting said at least one electronic device (50) to a testing apparatus;
performing the electrical wafer testing of said first electronic device by positioning a probe of said testing apparatus on a portion of said extended metallization layer positioned on said non-active area;
cutting said wafer, the cutting including reducing an extension of said metallization layer to an edge of said first electronic device; and
forming on said extended metallization layer an electrical connection.
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Accused Products
Abstract
A method performs electrical testing and assembly of an electronic device on a wafer and comprising a pad made in an oxide layer covered by a passivation layer. The method includes connecting the electronic device to a testing apparatus; providing said electronic device with a metallization layer extending on the passivation layer from the pad to a non-active area of said wafer. The method comprises-performing the electrical testing on wafer of the electronic device by placing a probe of on a portion of the extended metallization layer; performing the cut of said wafer, reducing the extension of the metallization layer to the edge of the electronic device; embedding the device inside a package, forming on the metallization layer an electrical connection configured to connect the metallization layer to a circuit in said package.
44 Citations
18 Claims
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1. A method, comprising:
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performing electrical wafer testing and assembly of a first electronic device on a wafer, the first electronic device including an insulating layer on the wafer, a passivation layer covering the insulating layer, and a first pad made in the insulating layer, the performing including; providing said first electronic device with an extended metallization layer extending on said passivation layer from said first pad to a non-active area of said wafer; connecting said at least one electronic device (50) to a testing apparatus; performing the electrical wafer testing of said first electronic device by positioning a probe of said testing apparatus on a portion of said extended metallization layer positioned on said non-active area; cutting said wafer, the cutting including reducing an extension of said metallization layer to an edge of said first electronic device; and forming on said extended metallization layer an electrical connection. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An electronic device, comprising:
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a wafer having a non-active area; a insulating layer formed on the wafer; a passivation layer covering the insulating layer; a first pad positioned in the insulating layer; and an extended metallization layer extending on said passivation layer from said first pad to the non-active area of said wafer. - View Dependent Claims (11, 12, 13, 14, 18)
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15. A multichip device, comprising:
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a package that includes a support element; a first electronic device that includes; a substrate having an edge; a metallization layer positioned on the substrate and extended to the edge of the substrate; and an electrical connection positioned on said metallization layer and configured to establish an electrical connection between the metallization layer and the support element; and a second electronic device in stacked configuration with said first electronic device. - View Dependent Claims (16, 17)
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Specification