OPTIMIZED POLARIZATION ILLUMINATION

• US 20110051114A1
• Filed: 05/04/2010
• Published: 03/03/2011
• Est. Priority Date: 12/19/2003
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: Donis Flagello, Robert Socha, Steve Hansen
• Inventors: Hansen, Steve, Flagello, Donis, SOCHA, Robert
• Granted Patent: US 8,395,757 B2
• Time in Patent Office: Days
• US Class Current: 355/71
• CPC Class Codes: G03F 7/70125 Use of illumination settings tailored to particular mask patterns details of setting means G03F7/70091
• CPC Class Codes: G03F 7/70341 Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply chemical composition of immersion liquids G03F7/2041
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G03F 7/70566 Polarisation control
• CPC Class Codes: G03F 7/70616 Monitoring the printed patterns

Abstract

Disclosed concepts include a method of optimizing polarization of an illumination of a pattern to be formed in a surface of a substrate. Polarized illumination is optimized by determining an illumination intensity for at least one point on an illuminator for at least two polarization states, determining image log slope for the at least one point on the illuminator for the at least two polarization states, determining a maximum image log slope (ILS) where the ILS is near zero for the at least one point on the illuminator, and selecting an optimal polarization state corresponding to the at least two polarization states that minimizes an ILS for the at least one point on the illuminator. This may be repeated for a plurality of points on the illuminator.

Claims

1. An apparatus for increasing a process window associated with imaging a mask design onto a target portion of a substrate, said apparatus comprising:

a computer system configured to optimize polarization and intensity at each of a plurality of points of an illuminator used to illuminate the mask design by performing the steps of;

(a) determining an illumination intensity for at least one point on the illuminator for at least two polarization states;

(b) determining image log slope (ILS) for the at least one point on the illuminator for the at least two polarization states;

(c) determining a maximum image point where the ILS is at least near zero for the at least one point on the illuminator;

(d) selecting an optimal polarization state corresponding to the maximum ILS for the at least one point on the illuminator; and

(e) repeating steps (a)-(d) for each of the plurality of points on the illuminator.

2. A method of optimizing polarization of an illumination of a pattern to be formed in a surface of a substrate, comprising the steps of:

(a) determining an illumination intensity for at least one point on an illuminator having a plurality of illumination points, the illuminator being used to illuminate a mask having the pattern, the illumination intensity being determined for at least two polarization components;

(b) generating a contrast image associated with the surface of the substrate relative to the illumination intensity for each of the at least two polarization components; and

(c) optimizing the contrast image for each of the at least two polarization components to obtain a better contrast of the pattern to be formed in the surface of the substrate.

3. The method of optimizing polarization according to claim 2, wherein the step of optimizing further comprises the step of maximizing contrast of the contrast image for both of the at least two polarization components.

4. The method of optimizing polarization according to claim 2, further comprising the step of determining a value of each of the at least two polarization components that obtain the better contrast.

5. The method of optimizing polarization according to claim 2, further comprising the steps of:

(i) determining an image log slope (ILS) for the at least one point on the illuminator for the at least two polarization components; and

(ii) determining a maximum point where the ILS is at least near zero for the at least one point of the illuminator.

6. The method of optimizing polarization according to claim 5, wherein the step of optimizing further comprises the step of selecting an optimal value of the polarization component corresponding to the maximum ILS.

7. The method of optimizing polarization of the illumination according to claim 2, further comprising repeating steps (a)-(c) for each of a plurality of points on the illuminator.

8. The method of optimizing polarization of the illumination according to claim 2, further comprising repeating steps (a)-(c) for each of a plurality of points on part of the illuminator relative to symmetry of a feature.

9. The method of optimizing polarization of the illuminator according to claim 2, further comprising repeating steps (a)-(c) for each of a plurality of points on half of the illuminator.

10. The method of optimizing polarization of an illuminator according to claim 7, further comprising the step of combining the optimal polarization component for each of the plurality of points on the illuminator for creating an optimal illumination of the pattern.

11. The method of optimizing polarization of an illuminator according to claim 2, wherein the optimal polarization component is a variant of the at least two polarization components.

12. The method of optimizing polarization of an illuminator according to claim 2, wherein the optimal polarization component corresponds to one of the at least two polarization components.

13. The method of optimizing polarization of an illuminator according to claim 2, wherein the at least two polarization components includes at least X and Y polarization components.