Series Current Limiter Device
First Claim
Patent Images
1. A transient current blocking unit, comprising:
- a pair of self-bootstrapping diodes connected together in series with opposed polarities;
wherein each said diode is optimized for a maximum current density, under reverse bias, which is more than ten times the maximum current density which would occur in said diode if optimized for rectification.
4 Assignments
0 Petitions
Accused Products
Abstract
Semiconductor protection devices, and related methods and systems, especially devices for providing series current limiting. The device typically comprises two regenerative building blocks and/or MOSFETs connected back-to-back in series, where one of the MOSFETs/Regenerative Building Blocks has an extra voltage probe electrode that provides a regenerative signal with self-limited voltage to the other via coupling to its gate electrode.
-
Citations
20 Claims
-
1. A transient current blocking unit, comprising:
-
a pair of self-bootstrapping diodes connected together in series with opposed polarities; wherein each said diode is optimized for a maximum current density, under reverse bias, which is more than ten times the maximum current density which would occur in said diode if optimized for rectification. - View Dependent Claims (2, 3)
-
-
4. A transient current blocking unit, comprising:
-
a pair of diodes connected together in series with opposed polarities; at least one of said diodes comprising a semiconductor device which includes;
a first semiconductor channel which electrically separates a first semiconductor source of a first conductivity type from a first drift region, and which is gated by a first gate electrode;
a second semiconductor channel which electrically separates a second semiconductor source of a second conductivity type from a second drift region, and which is gated by a second gate electrode;
said first and second sources being electrically connected together;
a first external terminal, which is operatively connected to receive first-type majority carriers through said first drift region, and a second external terminal, which is operatively connected to receive second-type majority carriers through said second drift region;
said first gate electrode being operatively connected to receive a potential which is dependent on the potential of said second drift region, and said second gate electrode being operatively connected to receive a potential which is dependent on the potential of said first drift region;wherein each said diode has a maximum current density, under reverse bias, which is more than ten times the maximum current density which would occur in said diode if optimized for rectification. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
-
-
16. A method for limiting transient current between two terminals, comprising the actions of:
-
connecting a pair of diodes in series between said terminals, said diodes being connected with opposed polarities; and when a cathode terminal of either said diode is more negative than an anode terminal thereof, then sinking current from said anode terminal through a first drift region and a first field-effect-gated channel to an n-type source, and also sourcing current to said cathode terminal from a p-type source through a second field-effect-gated channel and a second drift region;
said n-type and p-type sources being electrically connected together;
said second channel being gated by a second gate electrode which is coupled to said first drift region; and
said first channel being gated by a first gate electrode which is coupled to said second drift region;wherein each said diode is optimized for a maximum current density, under reverse bias, which is more than ten times the maximum current density which would occur in said diode if optimized for rectification. - View Dependent Claims (17, 18, 19, 20)
-
Specification