Semiconductor Device, and Power Conversion Device Using Semiconductor Device
First Claim
1. A vehicle power module, comprising:
- an upper arm circuit portion in which a plurality of power semiconductor elements are connected in parallel;
a lower arm circuit portion in which a plurality of power semiconductor elements, different from those of the upper arm circuit portion, are connected in parallel, and moreover that is connected in series with the upper arm circuit portion;
an insulating board upon which at least the upper arm circuit portion is implemented; and
a metallic base joined to the side of the insulating board opposite to its side upon which the upper arm circuit portion is implemented;
wherein the upper arm circuit portion comprises;
a first connecting conductor for electrically connecting together a positive electrode terminal of DC power supply side and a collector terminal of a power semiconductor element of the upper arm circuit portion; and
a second connecting conductor for electrically connecting together an emitter terminal of a power semiconductor element of the upper arm circuit portion and a collector terminal of a power semiconductor element of the lower arm circuit portion;
and wherein power semiconductor elements of the upper arm circuit portion, the first connecting conductor, and the second connecting conductor are arranged upon the insulating board so that two or more looped current paths are formed upon the metallic base by currents that flow when the power semiconductor elements are switched.
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0 Petitions
Accused Products
Abstract
The present invention provides a vehicle power module and a power converter including a power semiconductor element (328), a plurality of connecting conductors (371U, 372U, 373U) for transmitting current to the power semiconductor element (328), and a metallic base (304) upon which the power semiconductor element (328) and the plurality of connecting conductors (371U, 372U, and 373U) are mounted; and the power semiconductor element (328) and the plurality of connecting conductors (371U, 372U, and 373U) are mounted upon the metallic base (304) so as to form a looped current path. Desirably, the power semiconductor element (328) and the plurality of connecting conductors (371U, 372U, 373U) are arranged so as to form two or more looped current paths.
87 Citations
23 Claims
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1. A vehicle power module, comprising:
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an upper arm circuit portion in which a plurality of power semiconductor elements are connected in parallel; a lower arm circuit portion in which a plurality of power semiconductor elements, different from those of the upper arm circuit portion, are connected in parallel, and moreover that is connected in series with the upper arm circuit portion; an insulating board upon which at least the upper arm circuit portion is implemented; and a metallic base joined to the side of the insulating board opposite to its side upon which the upper arm circuit portion is implemented; wherein the upper arm circuit portion comprises; a first connecting conductor for electrically connecting together a positive electrode terminal of DC power supply side and a collector terminal of a power semiconductor element of the upper arm circuit portion; and a second connecting conductor for electrically connecting together an emitter terminal of a power semiconductor element of the upper arm circuit portion and a collector terminal of a power semiconductor element of the lower arm circuit portion; and wherein power semiconductor elements of the upper arm circuit portion, the first connecting conductor, and the second connecting conductor are arranged upon the insulating board so that two or more looped current paths are formed upon the metallic base by currents that flow when the power semiconductor elements are switched. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A semiconductor device that uses at least a single power semiconductor element that, by switching, can either short circuit together or disconnect the electrical potentials at the two ends of the power semiconductor element, and comprising:
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a power semiconductor element of a thin plate shape equipped with electrodes on both sides; an insulating board upon one surface of which at least a first wiring pattern, a second wiring pattern, and a third wiring pattern are formed; and a metallic base that is adhered to the surface of the insulating board opposite to its surface upon which the wiring patterns are disposed; and wherein; an electrode of one side of the power semiconductor element is electrically connected upon the first wiring pattern of the insulating board, and an electrode of other side of the power semiconductor element is connected to a second wiring pattern and a third wiring pattern; the first wiring pattern is approximately shaped as a letter-T, and the second and third wiring patterns are disposed on both sides of the vertical bar of the approximate letter-T shape of the first wiring pattern; a first current path of the first wiring pattern, the power semiconductor element, and the second wiring pattern, and a second current path of the first wiring pattern, the power semiconductor element, and the third wiring pattern, constitute two current paths that turn around in letter-U shapes; and two eddy currents that are induced in the metallic base due to current flowing when the power semiconductor element is switched are created so as to eddy in mutually opposite directions. - View Dependent Claims (23)
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Specification