Method of fabricating semiconductor substrate and method of fabricating light emitting device
First Claim
1. A method of fabricating a semiconductor substrate, the method comprising:
- forming a first semiconductor layer on a substrate;
forming a metallic material layer on the first semiconductor layer;
forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer; and
separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.
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Abstract
The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.
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Citations
73 Claims
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1. A method of fabricating a semiconductor substrate, the method comprising:
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forming a first semiconductor layer on a substrate; forming a metallic material layer on the first semiconductor layer; forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer; and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of fabricating a light emitting device, the method comprising:
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forming a first semiconductor layer on a first substrate; forming a metallic material layer on the first semiconductor layer; forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer; forming a first compound semiconductor layer on the second semiconductor layer; forming an active layer on the first compound semiconductor layer; forming a second compound semiconductor layer on the active layer; attaching a second substrate to the second compound semiconductor layer; and separating the first substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method of fabricating a semiconductor substrate, the method comprising:
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forming a first semiconductor layer on a substrate; forming a metallic material layer on the first semiconductor layer; forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer; and growing the void in the first semiconductor layer by heating the substrate after forming the second semiconductor layer. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30)
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31. A method of fabricating a light emitting device, the method comprising:
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forming a first semiconductor layer on a first substrate; forming a metallic material layer on the first semiconductor layer; forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer; forming a first compound semiconductor layer on the second semiconductor layer; forming an active layer on the first compound semiconductor layer; forming a second compound semiconductor layer on the active layer; attaching a second substrate to the second compound semiconductor layer; and growing the void in the first semiconductor layer by heating the first substrate after attaching the second substrate. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40)
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41. A method of fabricating a semiconductor substrate, the method comprising:
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forming a first semiconductor layer on a substrate; forming a metallic material layer on the first semiconductor layer; forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer; and evaporating reaction by-products of the metallic material layer and nitrogen to remove the reaction by-products formed during formation of the void. - View Dependent Claims (42, 43, 44, 45, 46, 47, 48, 49, 50)
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51. A method of fabricating a light emitting device, the method comprising:
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forming a first semiconductor layer on a substrate; forming a metallic material layer on the first semiconductor layer; forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer; forming a first compound semiconductor layer on the second semiconductor layer; forming an active layer on the first compound semiconductor layer; forming a second compound semiconductor layer on the active layer; and evaporating reaction by-products of the metallic material layer and nitrogen to remove the reaction by-products formed during formation of the void. - View Dependent Claims (52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62)
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63. A method of fabricating a light emitting device, the method comprising:
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forming, in a first chamber, a second semiconductor layer on a substrate comprising a first semiconductor layer and a metallic material layer on the first semiconductor layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer; transferring the substrate comprising the second semiconductor layer from the first chamber to a second chamber; and forming, in the second chamber, a compound semiconductor layer on the second semiconductor layer. - View Dependent Claims (64, 65, 66, 67, 68, 69, 70, 71, 72, 73)
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Specification