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Method of fabricating semiconductor substrate and method of fabricating light emitting device

  • US 20110053303A1
  • Filed: 08/26/2010
  • Published: 03/03/2011
  • Est. Priority Date: 08/26/2009
  • Status: Active Grant
First Claim
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1. A method of fabricating a semiconductor substrate, the method comprising:

  • forming a first semiconductor layer on a substrate;

    forming a metallic material layer on the first semiconductor layer;

    forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer; and

    separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

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