PLASMA CVD APPARATUS, METHOD FOR FORMING MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
1. A plasma CVD apparatus comprising,a first electrode provided with a plurality of depressed openings on a common plane and supplied power;
- anda second electrode opposite to the common plane for placing a substrate,wherein the common plane forms glow discharge plasma by being supplied the power,wherein a gas supply port is provided for the plurality of depressed openings, andwherein the plurality of depressed openings each have a tapered shape and are chamfered or roundly chamfered.
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Abstract
A structure of a plasma CVD apparatus for forming a dense semiconductor film is provided. Further, a technique for forming a dense crystalline semiconductor film (e.g., a microcrystalline semiconductor film) without a cavity between crystal grains is provided. An electrode supplied with electric power for generating plasma is included in a reaction chamber of the plasma CVD apparatus. This electrode has a common plane on a surface opposite to a substrate, and the common plane is provided with depressed openings. Gas supply ports are provided on the bottom of the depressed openings or on the common plane of the electrode. The depressed openings are provided in isolation from one another.
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Citations
20 Claims
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1. A plasma CVD apparatus comprising,
a first electrode provided with a plurality of depressed openings on a common plane and supplied power; - and
a second electrode opposite to the common plane for placing a substrate, wherein the common plane forms glow discharge plasma by being supplied the power, wherein a gas supply port is provided for the plurality of depressed openings, and wherein the plurality of depressed openings each have a tapered shape and are chamfered or roundly chamfered. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A plasma CVD apparatus comprising,
a first electrode provided with a plurality of depressed openings on a common plane and supplied power; - and
a second electrode opposite to the common plane for placing a substrate, wherein the common plane forms glow discharge plasma by being supplied the power, wherein a gas supply port provided for the common plane, and wherein the plurality of depressed openings each have a tapered shape and are chamfered or roundly chamfered. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method for manufacturing a microcrystalline semiconductor film comprising the steps of:
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introducing a reactive gas into a reaction chamber through a gas supply port of a first electrode; setting a pressure of the reaction chamber to greater than or equal to 450 Pa and less than or equal to 13332 Pa; forming a plasma region between the first electrode and a second electrode by supplying power to the first electrode; forming crystalline deposition precursors having crystallinity in a gas phase including the plasma region; forming a crystal nucleus of greater than or equal to 5 nm and less than or equal to 15 nm by depositing the deposition precursors over a substrate; and forming the microcrystalline semiconductor film by growing a crystal from the crystal nucleus, wherein the first electrode has a common plane opposite to the second electrode and is provided with a plurality of depressed openings, and wherein a distance between the first electrode and the second electrode is greater than or equal to 4 mm and less than or equal to 16 mm. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification