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PLASMA CVD APPARATUS, METHOD FOR FORMING MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

  • US 20110053357A1
  • Filed: 08/20/2010
  • Published: 03/03/2011
  • Est. Priority Date: 08/25/2009
  • Status: Active Grant
First Claim
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1. A plasma CVD apparatus comprising,a first electrode provided with a plurality of depressed openings on a common plane and supplied power;

  • anda second electrode opposite to the common plane for placing a substrate,wherein the common plane forms glow discharge plasma by being supplied the power,wherein a gas supply port is provided for the plurality of depressed openings, andwherein the plurality of depressed openings each have a tapered shape and are chamfered or roundly chamfered.

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