REPLACEABLE UPPER CHAMBER PARTS OF PLASMA PROCESSING APPARATUS
First Claim
1. A replaceable upper chamber part of a plasma reaction chamber in which semiconductor substrates can be processed, comprising a window, side gas delivery system and/or top chamber interface, wherein:
- the top chamber interface comprises a monolithic metal cylinder having a uniform diameter inner surface, an upper flange extending horizontally away from the inner surface and a lower flange extending horizontally away from the inner surface;
an upper annular vacuum sealing surface adapted to seal against a dielectric window of the plasma chamber;
a lower annular vacuum sealing surface adapted to seal against a bottom section of the plasma chamber;
a thermal mass at an upper portion of the cylinder, the thermal mass defined by a wider portion of the cylinder between the inner surface and an outer surface extending vertically from the upper flange, the thermal mass being effective to provide azimuthal temperature uniformity of the inner surface, and a thermal choke at a lower portion of the cylinder effective to minimize transfer of heat across the lower vacuum sealing surface, the thermal choke defined by a thin metal section having a thickness of less than 0.25 inch and extending at least 25% of the length of the inner surface;
the window comprises a ceramic disk having a uniform thickness, at least one blind hole configured to receive a temperature monitoring sensor, a vacuum sealing surface adapted to seal against an upper flange of a top chamber interface, and a central bore configured to receive a top gas injector which delivers process gas into the center of the chamber; and
/orthe gas delivery system comprises bifurcated gas lines which receive tuning gas from a common feed and gas tubes arranged to flow the tuning gas equal distances from the common feed to injectors mounted in a side wall of the top chamber interface.
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Accused Products
Abstract
An upper chamber section of a plasma reaction chamber includes a ceramic window with blind bores in an upper surface for receipt of a thermal couple and a resistance temperature detector, a top chamber interface which comprises an upper surface which vacuum seals against the bottom of the window and a gas injection system comprising 8 side injectors mounted in the sidewall of the top chamber interface and a gas delivery system comprising tubing which provides symmetric gas flow to the 8 injectors from a single gas feed connection.
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Citations
18 Claims
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1. A replaceable upper chamber part of a plasma reaction chamber in which semiconductor substrates can be processed, comprising a window, side gas delivery system and/or top chamber interface, wherein:
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the top chamber interface comprises a monolithic metal cylinder having a uniform diameter inner surface, an upper flange extending horizontally away from the inner surface and a lower flange extending horizontally away from the inner surface;
an upper annular vacuum sealing surface adapted to seal against a dielectric window of the plasma chamber;
a lower annular vacuum sealing surface adapted to seal against a bottom section of the plasma chamber;
a thermal mass at an upper portion of the cylinder, the thermal mass defined by a wider portion of the cylinder between the inner surface and an outer surface extending vertically from the upper flange, the thermal mass being effective to provide azimuthal temperature uniformity of the inner surface, and a thermal choke at a lower portion of the cylinder effective to minimize transfer of heat across the lower vacuum sealing surface, the thermal choke defined by a thin metal section having a thickness of less than 0.25 inch and extending at least 25% of the length of the inner surface;the window comprises a ceramic disk having a uniform thickness, at least one blind hole configured to receive a temperature monitoring sensor, a vacuum sealing surface adapted to seal against an upper flange of a top chamber interface, and a central bore configured to receive a top gas injector which delivers process gas into the center of the chamber; and
/orthe gas delivery system comprises bifurcated gas lines which receive tuning gas from a common feed and gas tubes arranged to flow the tuning gas equal distances from the common feed to injectors mounted in a side wall of the top chamber interface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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- 11. A ceramic side gas injector configured to mount in any one of eight symmetrically arranged gas injector mounting holes in a side wall of a top chamber interface of a plasma reaction chamber in which semiconductor substrates can be processed, the side gas injector consisting of a stepped cylindrical ceramic body having an upstream section of larger diameter than a downstream section, and a uniform diameter central bore extending in an axial direction through axial end surfaces of the injector body.
Specification