Organic light emitting diode display

• US 20110057181A1
• Filed: 09/03/2010
• Published: 03/10/2011
• Est. Priority Date: 09/04/2009
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Jeong, Jae-Kyeong, Yang, Hui-Won, Choi, Jong-Hyun
• Granted Patent: US 8,669,700 B2
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: Y02E 10/549 Organic PV cells

Abstract

An organic light emitting diode (OLED) display includes a substrate main body, a thin film transistor formed on the substrate main body, and an OLED formed on the substrate main body. The thin film transistor includes a gate electrode, an oxide semiconductor layer disposed on the gate electrode in an insulated manner, and source and drain electrodes respectively contacting the oxide semiconductor layer. Parts of the source and drain electrodes contacting the oxide semiconductor layer are separated from the gate electrode in a direction that is parallel with the substrate main body by a predetermined distance.

Claims

1. An organic light emitting diode (OLED) display, comprising:

a substrate main body;

a thin film transistor on the substrate main body; and

an OLED on the substrate main body,

wherein the thin film transistor includes a gate electrode, an oxide semiconductor layer disposed on the gate electrode in an insulated manner, and source and drain electrodes respectively contacting the oxide semiconductor layer, and

parts of the source and drain electrodes contacting the oxide semiconductor layer are separated from the gate electrode in a direction that is parallel with the substrate main body by a predetermined distance.

2. The OLED display as claimed in claim 1, wherein the parts of the source and drain electrodes contacting the oxide semiconductor layer are separated from the gate electrode by more than 0 μ

m and no greater than 5 μ

m in the direction that is parallel with the substrate main body.

3. The OLED display as claimed in claim 2, wherein the substrate main body is divided into a display area and a non-display area, and a plurality of pixels is formed in the display area of the substrate main body to display an image.

4. The OLED display as claimed in claim 3, wherein each of the plurality of pixels includes a plurality of thin film transistors.

5. The OLED display as claimed in claim 4, wherein the OLED is disposed at each of the plurality of pixels and directly connected to one of the plurality of thin film transistors.

6. The OLED display as claimed in claim 5, wherein the thin film transistor is formed in both the display area and the non-display area of the substrate main body.

7. The OLED display as claimed in claim 3, further comprising an additional thin film transistor wherein at least parts of source and drain electrodes contacting an oxide semiconductor layer overlap a gate electrode along the direction that is parallel with the substrate main body.

8. The OLED display as claimed in claim 7, wherein each of the pixels comprises at least one of the thin film transistors and at least one of the additional thin film transistors.

9. The OLED display as claimed in claim 8, wherein the OLED is disposed at each pixel and directly connected with the additional thin film transistor.

10. The OLED display as claimed in claim 9, wherein the thin film transistor is formed in the display area and the non-display area of the substrate main body, and the additional thin film transistor is only formed in the display area of the substrate main body.

11. The OLED display as claimed in claim 9, wherein the thin film transistor is only formed in the display area of the substrate main body, and the additional thin film transistor is formed in the display area and the non-display area of the substrate main body.

12. The OLED display as claimed in claim 9, wherein the thin film transistor and the additional thin film transistor are respectively formed in both the display area and the non-display area of the substrate main body.

13. The OLED display as claimed in claim 9, wherein only the additional thin film transistor connected to the OLED has at least parts of source and drain electrodes contacting an oxide semiconductor layer overlap a gate electrode along the direction that is parallel with the substrate main body.

14. The OLED display as claimed in claim 1, wherein the oxide semiconductor layer includes oxygen (O) and at least one of gallium (Ga), indium (In), zinc (Zn), and tin (Sn).

15. The OLED display as claimed in claim 14, wherein the gate electrode is metal.

16. The OLED display as claimed in claim 14, wherein the gate electrode is doped polycrystalline silicon.