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TRANSISTOR AND DISPLAY DEVICE

  • US 20110057186A1
  • Filed: 08/26/2010
  • Published: 03/10/2011
  • Est. Priority Date: 09/04/2009
  • Status: Active Grant
First Claim
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1. A transistor comprising:

  • a gate electrode layer;

    a gate insulating layer over the gate electrode layer;

    an oxide semiconductor layer over the gate insulating layer;

    a pair of oxide conductive layers partly overlapping with the oxide semiconductor layer over the gate insulating layer;

    a source electrode layer and a drain electrode layer over each of the pair of oxide conductive layers; and

    an oxide insulating layer in contact with the oxide semiconductor layer,wherein the pair of oxide conductive layers includes a crystal region.

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