VARIABLE RESISTIVE MEMORY PUNCHTHROUGH ACCESS METHOD
First Claim
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1. A method comprising:
- applying a voltage across a source region and a drain region of a metal-oxide-semiconductor field effect transistor that is sufficient to merge a source depletion region and a drain depletion region of the metal-oxide-semiconductor field effect transistor and conduct a write current through the metal-oxide-semiconductor field effect transistor;
switching a variable resistive data cell from a high resistance state to a low resistance state by passing the write current through the variable resistive data cell in a first direction, the write current provided by the metal-oxide-semiconductor field effect transistor being electrically coupled to the variable resistive data cell.
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Abstract
Variable resistive punchthrough access methods are described. The methods include switching a variable resistive data cell from a high resistance state to a low resistance state by passing a write current through the magnetic tunnel junction data cell in a first direction. The write current is provided by a transistor being electrically coupled to the variable resistive data cell and a source line. The write current passes through the transistor in punchthrough mode.
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Citations
20 Claims
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1. A method comprising:
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applying a voltage across a source region and a drain region of a metal-oxide-semiconductor field effect transistor that is sufficient to merge a source depletion region and a drain depletion region of the metal-oxide-semiconductor field effect transistor and conduct a write current through the metal-oxide-semiconductor field effect transistor; switching a variable resistive data cell from a high resistance state to a low resistance state by passing the write current through the variable resistive data cell in a first direction, the write current provided by the metal-oxide-semiconductor field effect transistor being electrically coupled to the variable resistive data cell. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method comprising:
switching a variable resistive data cell from a high resistance state to a low resistance state by passing a write current through the variable resistive data cell in a first direction, the write current provided by a metal-oxide-semiconductor field effect transistor being electrically coupled to the variable resistive data cell, the write current passing through the metal-oxide-semiconductor field effect transistor in punchthrough mode. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A method comprising:
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applying a voltage across a source region and a drain region of a first metal-oxide-semiconductor field effect transistor that is sufficient to merge a source depletion region and a drain depletion region of the first metal-oxide-semiconductor field effect transistor and conduct a write current through the first metal-oxide-semiconductor field effect transistor; activating a common metal-oxide-semiconductor field effect transistor to allow the write current to pass through the common metal-oxide-semiconductor field effect transistor, the common metal-oxide-semiconductor field effect transistor electrically coupled to a source line and the first variable resistive data cell, the common metal-oxide-semiconductor field effect transistor electrically coupled to a second variable resistive data cell. - View Dependent Claims (18, 19, 20)
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Specification