LIGHT-EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR

• US 20110062412A1
• Filed: 03/27/2009
• Published: 03/17/2011
• Est. Priority Date: 03/27/2008
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Song, June O
• Granted Patent: US 8,373,152 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure

Abstract

A light emitting element according to an exemplary embodiment includes: a support substrate; a second electrode layer formed on the support substrate; a current spreading layer formed on the support substrate; a second conductive semiconductor layer formed on the second electrode layer and the current spreading layer; an active layer formed on the second conductive semiconductor layer; a first conductive semiconductor layer formed on the active layer; and a first electrode layer formed on the first conductive semiconductor layer.

Claims

1. A light emitting element, comprising:

a support substrate;

a second electrode layer formed on the support substrate;

a current spreading layer formed on the support substrate;

a second conductive semiconductor layer formed on the second electrode layer and the current spreading layer;

an active layer formed on the second conductive semiconductor layer;

a first conductive semiconductor layer formed on the active layer; and

a first electrode layer formed on the first conductive semiconductor layer.

2. The light emitting element of claim 1, further comprising a wafer bonding layer between the support substrate and the second electrode layer.

3. The light emitting element of claim 1, wherein the second electrode layer contacts the current spreading layer and the second conductive semiconductor layer.

4. The light emitting element of claim 3, wherein the second electrode layer has an ohmic contacting interface with the current spreading layer and has a schottky contacting interface with the second conductive semiconductor layer.

5. The light emitting element of claim 4, wherein a part of the second electrode layer having the schottky contacting interface with the second conductive semiconductor layer is at least partially overlapped with the first electrode layer in a vertical direction.

11. The light emitting element of claim 1, further comprising an interface reforming layer between the current spreading layer and the second conductive semiconductor layer.

12. The light emitting element of claim 11, wherein the interface reforming layer has a supperlattice structure and is made of any one of InGaN, GaN, AlInN, AlN, InN, and AlGaN that are injected with first conductive impurities, any one of InGaN, GaN, AlInN, AlN, InN, and AlGaN that are injected with second conductive impurities, or any one of III-group nitride based materials having a nitrogen-polar surface.

13. The light emitting element of claim 12, wherein in the case in which the interface reforming layer has the superlattice structure, the interface reforming layer is made of nitride or carbon nitride containing II-group, III-group, or IV-group elements.

14. The light emitting element of claim 11, wherein the second electrode layer contacts the current spreading layer, the interface reforming layer, and the second conductive semiconductor layer.

15. The light emitting element of claim 1, wherein the current spreading layer is made of at least one of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and oxidized nickel-gold (NiO—

Au).

6. The light emitting element of claim 6, further comprising a current blocking region between the support substrate and the second electrode layer.

7. The light emitting element of claim 6, wherein the current blocking region is formed by burying an electroconductive material or by an air gap.

8. The light emitting element of claim 6, wherein at least a part of the current blocking region is vertically overlapped with the first electrode layer.

9. The light emitting element of claim 6, wherein the current blocking region is surrounded by the second electrode layer and the wafer bonding layer.

10. The light emitting element of claim 6, wherein the current blocking region is surrounded by the second electrode layer.

16. (canceled)

17. (canceled)

18. (canceled)

19. (canceled)

20. (canceled)