SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
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1. A semiconductor device comprising:
- a gate electrode layer over a substrate;
an insulating layer which is in contact with a side surface of the gate electrode layer and has a tapered side surface over the gate electrode layer;
over the insulating layer, a gate insulating layer which is thinner than the insulating layer and is in contact with a top surface of the gate electrode layer;
an oxide semiconductor layer over the gate insulating layer;
a source electrode layer and a drain electrode layer over a stack including the insulating layer, the gate insulating layer, and the oxide semiconductor layer; and
an oxide insulating layer in contact with the oxide semiconductor layer, over the source electrode layer and the drain electrode layer.
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Abstract
An object is to realize low power consumption while manufacturing a semiconductor device including a thin film transistor whose parasitic capacitance is reduced. Part of an insulating layer covering the periphery of a gate electrode layer is formed to be thick. Specifically, a stack including a spacer insulating layer and a gate insulating layer is formed. The thick part of the insulating layer covering the periphery of the gate electrode layer reduces parasitic capacitance formed between the gate electrode layer of the thin film transistor and another electrode layer (another wiring layer) overlapping with the gate electrode layer.
73 Citations
16 Claims
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1. A semiconductor device comprising:
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a gate electrode layer over a substrate; an insulating layer which is in contact with a side surface of the gate electrode layer and has a tapered side surface over the gate electrode layer; over the insulating layer, a gate insulating layer which is thinner than the insulating layer and is in contact with a top surface of the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; a source electrode layer and a drain electrode layer over a stack including the insulating layer, the gate insulating layer, and the oxide semiconductor layer; and an oxide insulating layer in contact with the oxide semiconductor layer, over the source electrode layer and the drain electrode layer. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising:
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a gate electrode layer over a substrate; an insulating layer which is in contact with a side surface of the gate electrode layer and has a tapered side surface over the gate electrode layer; over the insulating layer, a gate insulating layer which is thinner than the insulating layer and is in contact with a top surface of the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; and an oxide insulating layer in contact with a side surface of the oxide semiconductor layer, over the source electrode layer and the drain electrode layer. - View Dependent Claims (7, 8, 9, 10)
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11. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer over a substrate, forming an insulating film covering the gate electrode layer, forming an insulating layer covering a side surface of the gate electrode layer, by forming an opening reaching a top surface of the gate electrode layer through selective etching of the insulating film, over the insulating layer, forming a gate insulating layer which is thinner than the insulating layer and is in contact with the top surface of the gate electrode layer, forming an oxide semiconductor layer over the gate insulating layer, forming a source electrode layer and a drain electrode layer over a stack including the insulating layer, the gate insulating layer, and the oxide semiconductor layer, and forming an oxide insulating layer in contact with the oxide semiconductor layer, over the source electrode layer and the drain electrode layer. - View Dependent Claims (12, 13, 14, 15, 16)
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Specification