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TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (GA,AL,IN,B)N THIN FILMS, HETEROSTRUCTURES, AND DEVICES

  • US 20110062449A1
  • Filed: 11/23/2010
  • Published: 03/17/2011
  • Est. Priority Date: 06/01/2005
  • Status: Active Grant
First Claim
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1. A semiconductor film, comprising:

  • one or more planar semipolar (Ga, Al, In, B)N layers grown on a surface of a substrate or on a template layer pre-deposited on the substrate, wherein an area and quality of the planar semipolar (Ga, Al, In, B)N layers parallel to the surface of the substrate or template layer are sufficient to fabricate a semipolar (Ga, Al, In, B)N device.

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