LIGHT-EMITTING DIODE DEVICE AND FABRICATION METHOD THEREOF

• US 20110062474A1
• Filed: 09/10/2010
• Published: 03/17/2011
• Est. Priority Date: 09/14/2009
• Status: Abandoned Application

• Current Assignee: Advanced Optoelectronic Technology, Inc.
• Original Assignee: Advanced Optoelectronic Technology, Inc.
• Inventors: Chang, Chao Hsiung, Lin, Shen Bo, Tseng, Wen Liang, Chen, Pin Chuan
• Application Number:
  US12/879,255
• Publication Number:
  US 20110062474A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/54 having a particular shape

Abstract

A light-emitting diode device includes a frame, a light-emitting diode die, a fluorescent layer, a reflector, and a lens. The light-emitting diode die is disposed on the frame. The fluorescent layer is directly molded to cover the light-emitting diode die. The reflector is directly molded on the frame, surrounding the light-emitting diode die, and configured to direct light from the light-emitting die in a predetermined direction. The lens is directly molded within the reflector, covering the fluorescent layer.

Claims

1. A light-emitting diode device, comprising:

a frame;

a light-emitting diode die disposed on the frame;

a fluorescent layer molded to cover the light-emitting diode die;

a reflector molded on the frame, surrounding the light-emitting diode die, configured to direct light in a predetermined direction; and

a lens molded within the reflector, covering the fluorescent layer.

2. The light-emitting diode device of claim 1, wherein the fluorescent layer, the reflector, and the lens are formed using an injection molding technique or a transfer molding technique.

3. The light-emitting diode device of claim 1, wherein the frame comprises a die support, on which the light-emitting diode die is disposed.

4. The light-emitting diode device of claim 3, wherein the frame comprises two electrodes respectively wired to the light-emitting diode die.

5. The light-emitting diode device of claim 1, wherein the frame includes two electrodes, to which the light-emitting diode die is flip-chip bonded.

6. The light-emitting diode device of claim 1, wherein the material of the frame is copper.

7. The light-emitting diode device of claim 1, wherein the material of the fluorescent layer is fluorescent powder and polymer resin, which is epoxy resin, silicone resin, or a hybrid thereof.

8. The light-emitting diode device of claim 1, wherein the material of the reflector is silicone resin and white particles including silicon dioxide.

9. The light-emitting diode device of claim 1, wherein the material of the lens is silicone resin.

10. The light-emitting diode device of claim 1, wherein the light-emitting diode die is a laser diode, III-V group compound semiconductor light-emitting diode, or II-VI group compound semiconductor light-emitting diode.

11. A fabrication method of a light-emitting diode device, comprising the steps of:

providing a frame;

disposing a light-emitting diode die on the frame;

molding a fluorescent layer covering the light-emitting diode;

molding a reflector disposed on the frame, surrounding the light-emitting diode die, and configured to direct light in a predetermined direction; and

molding a lens, covering the fluorescent layer, in the reflector.

12. The fabrication method of claim 11, wherein the fluorescent layer, the reflector, and the lens are formed using an injection molding technique or a transfer molding technique.

13. The fabrication method of claim 11, wherein the frame comprises a die support, on which the light-emitting diode die is disposed.

14. The fabrication method of claim 13, wherein the frame comprises two electrodes respectively wired to the light-emitting diode die.

15. The fabrication method of claim 11, wherein the frame includes two electrodes, to which the light-emitting diode die is flip-chip bonded.

16. The fabrication method of claim 11, wherein the material of the frame is copper.

17. The fabrication method of claim 11, wherein the material of the fluorescent layer is fluorescent powder and polymer resin, which is epoxy resin, silicone resin, or a hybrid thereof.

18. The fabrication method of claim 11, wherein the material of the reflector is silicone resin and white particles including silicon dioxide.

19. The fabrication method of claim 11, wherein the material of the lens is silicone resin.

20. The fabrication method of claim 11, wherein the light-emitting diode die is a laser diode, III-V group compound semiconductor light-emitting diode, or II-VI group compound semiconductor light-emitting diode.