SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD FOR MANUFACTURING THE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND LAMP THAT USES THE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
First Claim
1. A semiconductor light-emitting element, comprising:
- a compound semiconductor layer that includes at least a p-type semiconductor layer; and
a transparent electrode that is provided on the p-type semiconductor layer;
whereinthe transparent electrode is formed from a transparent conductive film comprising an oxide of indium and gallium, andwherein the amount of gallium contained in the transparent conductive film is at a Ga/(In+Ga) atomic ratio of between about 0.10 and about 0.35.
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Accused Products
Abstract
Provided are a semiconductor light-emitting element that is capable of efficiently outputting blue color or ultraviolet light, and a lamp using the semiconductor light-emitting element.
The semiconductor light-emitting element is obtained by a manufacturing method that, when manufacturing the semiconductor light-emitting element that comprises a compound semiconductor layer that includes at least a p-type semiconductor layer, and a transparent electrode that is provided on the p-type semiconductor layer, includes a step of forming a film comprising an oxide of indium and gallium, or forming a film comprising an oxide of indium, gallium and tin, in an amorphous state on the p-type semiconductor layer, so as to form a transparent conductive film, followed by a step of performing an annealing process on the transparent conductive film at a temperature of 200° C. to 480° C.
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Citations
20 Claims
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1. A semiconductor light-emitting element, comprising:
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a compound semiconductor layer that includes at least a p-type semiconductor layer; and a transparent electrode that is provided on the p-type semiconductor layer;
whereinthe transparent electrode is formed from a transparent conductive film comprising an oxide of indium and gallium, and wherein the amount of gallium contained in the transparent conductive film is at a Ga/(In+Ga) atomic ratio of between about 0.10 and about 0.35. - View Dependent Claims (3, 6, 7, 8, 9, 10, 11, 12, 20)
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2. (canceled)
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4. A semiconductor light-emitting element, comprising:
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a compound semiconductor layer that includes at least a p-type semiconductor layer; and a transparent electrode that is provided on the p-type semiconductor layer;
wherein the transparent electrode is made from a transparent conductive film comprising an oxide of indium, gallium and tin;wherein the amount of gallium contained in said transparent conductive film is at a Ga/(In+Ga+Sn) atomic ratio of between about 0.02 and about 0.30, and the amount of tin contained is at a Sn/(In+Ga+Sn) atomic ratio of between about 0.01 and about 0.11; and the transparent conductive film is crystallized.
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5. (canceled)
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13. A manufacturing method for a semiconductor light-emitting element that comprises a compound semiconductor layer that includes at least a p-type semiconductor layer, and a transparent electrode that is provided on the p-type semiconductor layer, comprising steps of:
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forming a film comprising an oxide of indium and gallium, or forming a film comprising an oxide of indium, gallium and tin, in an amorphous state on the p-type semiconductor layer, so as to form a transparent conductive film; and performing an annealing process on the transparent conductive film at a temperature of 200°
C. to 480°
C. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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Specification