finFETS AND METHODS OF MAKING SAME
First Claim
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1. A method, comprising:
- (a) forming two or more silicon fins on a top surface of an insulating layer on a silicon substrate, each fin of said two or more fins having a central region between and abutting first and second end regions and opposite sides;
(b) forming a gate dielectric layer on said opposite sides of each fin of said two or more fins;
(c) forming an electrically conductive gate over said gate dielectric layer over said central region of each fin of said of two or more fins;
(d) removing said gate dielectric layer from said first and second end regions of each fin of said two or more fin and removing said end regions of each of said two or more fins to form exposed opposite first and second ends of said central regions of each fin of said two or more fins;
after (d), (e) removing said insulating layer to expose first and second regions of said substrate on opposite sides of said gate; and
after (e), (f) simultaneously growing epitaxial silicon from said first and second regions of said substrate and from said first and second ends of said central regions of each fin of said two or more fins to form respective first and second merged source/drains.
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Abstract
A method of fabricating and a structure of a merged multi-fin finFET. The method includes forming single-crystal silicon fins from the silicon layer of an SOI substrate having a very thin buried oxide layer and merging the end regions of the fins by growing vertical epitaxial silicon from the substrate and horizontal epitaxial silicon from ends of the fins such that vertical epitaxial silicon growth predominates.
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Citations
20 Claims
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1. A method, comprising:
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(a) forming two or more silicon fins on a top surface of an insulating layer on a silicon substrate, each fin of said two or more fins having a central region between and abutting first and second end regions and opposite sides; (b) forming a gate dielectric layer on said opposite sides of each fin of said two or more fins; (c) forming an electrically conductive gate over said gate dielectric layer over said central region of each fin of said of two or more fins; (d) removing said gate dielectric layer from said first and second end regions of each fin of said two or more fin and removing said end regions of each of said two or more fins to form exposed opposite first and second ends of said central regions of each fin of said two or more fins; after (d), (e) removing said insulating layer to expose first and second regions of said substrate on opposite sides of said gate; and after (e), (f) simultaneously growing epitaxial silicon from said first and second regions of said substrate and from said first and second ends of said central regions of each fin of said two or more fins to form respective first and second merged source/drains. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 18, 19, 20)
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13. A structure comprising:
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two or more silicon fins on a top surface of an insulating layer, said insulating layer on a silicon substrate, each fin of said two or more fins having opposite sidewalls connecting opposite first and second ends; a gate dielectric layer on said sides of each fin of said two or more fins; an electrically conductive gate over said gate dielectric layer; first and second regions of said substrate on opposite sides of said gate; a first merged source/drain comprising first epitaxial silicon regions extending from said first region of said silicon substrate and abutting second epitaxial regions extending from said first ends of each fin of said two or more fins; and a second merged source/drain comprising third epitaxial silicon regions extending from said second region of said silicon substrate and abutting fourth epitaxial regions extending from said second ends of each fin of said two or more fins. - View Dependent Claims (14, 15, 16, 17)
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Specification