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NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE

  • US 20110063915A1
  • Filed: 03/15/2010
  • Published: 03/17/2011
  • Est. Priority Date: 09/16/2009
  • Status: Abandoned Application
First Claim
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1. A non-volatile semiconductor memory device, comprising:

  • a memory cell array having a plurality of non-volatile memory cells capable electrically rewriting data, bit lines and source lines;

    a driver circuit coupled with the source lines of the memory cell array, to output a voltage higher than a power source voltage or a programming voltage for writing data in a memory cell at an output terminal and discharge the source lines to ground by switching over; and

    a sense amplifier circuit coupled with the bit line to read data in the memory cell, the sense amplifier circuit including a sense node and a capacitor having a first terminal coupled with the sense node and a second terminal to receive a plurality of voltages to boost the sense node.

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