HIGH-TEMPERATURE SPIN-ON TEMPORARY BONDING COMPOSITIONS

• US 20110065257A1
• Filed: 11/18/2010
• Published: 03/17/2011
• Est. Priority Date: 06/25/2007
• Status: Active Grant

• Current Assignee: Brewer Science Inc.
• Original Assignee: Brewer Science Inc.
• Inventors: Pillalamarri, Sunil K., Hong, Wenbin
• Granted Patent: US 8,236,669 B2
• Time in Patent Office: Days
• US Class Current: 438/458
• CPC Class Codes: C09J 2203/326 for bonding electronic components such as wafers, chips or semiconductors
• CPC Class Codes: C09J 5/06 involving heating of the applied adhesive
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/6836 Wafer tapes, e.g. grinding or dicing support tapes adhesive tapes in general C09J7/20
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2221/6834 used to protect an active side of a device or wafer
• CPC Class Codes: H01L 2924/30105 Capacitance
• CPC Class Codes: Y10T 156/11 Methods of delaminating, per se; i.e. , separating at bonding face
• CPC Class Codes: Y10T 428/24355 Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]

Abstract

New compositions and methods of using those compositions as bonding compositions are provided. The compositions are preferably thermoplastic and comprise imides, amideimides, and/or amideimide-siloxanes (either in polymeric or oligomeric form) dispersed or dissolved in a solvent system, and can be used to bond an active wafer to a carrier wafer or substrate to assist in protecting the active wafer and its active sites during subsequent processing and handling. The compositions form bonding layers that are chemically and thermally resistant, but that can also be softened to allow the wafers to slide apart at the appropriate stage in the fabrication process.

Claims

1. A wafer bonding method comprising:

providing a stack comprising first and second substrates bonded together via a bonding composition layer comprising a compound selected from the group consisting of oligomers and polymers, which are selected from the group consisting of imide, amideimide, and amideimide-siloxane polymers and oligomers;

subjecting said stack to a temperature sufficient to soften said bonding layer; and

separating said first and second substrates.

2. The method of claim 1, wherein said temperature is at least about 200°

C.

3. The method of claim 1, wherein said separating comprises applying a force to at least one of said first and second substrates while causing the other of said first and second substrates to resist said force, said force being applied in a sufficient amount so as to separate said first and second substrates.

4. The method of claim 3, said stack having an axis that passes through both the first and second substrates, said force being applied in a generally transverse direction relative to said axis.

5. The method of claim 3, said applying a force comprising lifting the at least one first and second substrate in a direction generally away from the other of said first and second substrates.

6. The method of claim 1, further comprising thinning one of said substrates prior to said subjecting.

7. The method of claim 1, further comprising subjecting said stack to a process selected from the group consisting of backgrinding, metallizing, patterning, and combinations thereof prior to said subjecting to a temperature.

8. The method of claim 1, wherein said providing a stack comprises:

applying a bonding composition to at least one of the first and second substrates; and

contacting the substrates with one another so as to bond the substrates together.

9. The method of claim 8, wherein said applying comprises spin-coating the bonding composition onto one of the first and second substrates.

10. The method of claim 8, wherein said contacting comprises applying pressure to the substrates.

11. The method of claim 1, wherein:

said first substrate has a first surface and a second surface remote from said first surface and comprising at least one active site and plurality of topographical features, and said bonding composition layer is bonded to said second surface; and

said second substrate comprises a bonding surface that is bonded to said bonding composition layer.

12. The method of claim 11, wherein:

said topographical features present respective end surfaces remote from the first surface of said first substrate, and at least one of the end surfaces is further from the first surface of the first substrate than the other of said end surfaces, said further end surface defining a plane that is substantially parallel to said first surface; and

the distance from said plane to the bonding surface on said second substrate varying by less than about 10% across said plane and second substrate bonding surface.

13. The method of claim 1, wherein said first substrate:

has a first surface and a second surface remote from said first surface;

comprises at least one active site and plurality of topographical features on said second surface; and

is selected from the group consisting of microelectromechanical system devices, display devices, flexible substrates, compound semiconductors, low k dielectric layers, dielectric layers, ion implant layers, and substrates comprising silicon, aluminum, tungsten, tungsten silicide, gallium arsenide, germanium, tantalum, tantalum nitrite, SiGe, and mixtures of the foregoing.

14. The method of claim 1, wherein said second substrate comprises a material selected from the group consisting of sapphire, ceramic, glass, quartz, aluminum, and silicon.

15. The method of claim 1, wherein said compound is selected from the group consisting of polymers and oligomers having a formula selected from the group consisting of

16. The method of claim 15, wherein said compound is (I), and X is selected from the group consisting of alkyl-substituted phenyls, isopropylidenediphenyl, and hexafluoroisopropylidene.

17. The method of claim 15, wherein said compound further comprises an endcap group derived from a compound selected from the group consisting of aromatic mono-amines, aliphatic mono-amines, cyclo-aliphatic mono-amines, and phthalic anhydrides.

18. The method of claim 17, wherein said endcap group is selected from the group consisting of alkyls,

19. The method of claim 15, wherein said compound is (II), and Z is a siloxane having the formula

20. The method of claim 15, wherein said compound is (II), and Z is a moiety comprising an ether bridge selected from the group consisting of