SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a substrate;
a driver circuit portion over the substrate, the driver circuit portion including a driver circuit thin film transistor;
a pixel portion over the substrate, the pixel portion including a pixel thin film transistor;
a first counter electrode layer over the pixel portion with a liquid crystal layer interposed between the pixel portion and the first counter electrode layer; and
a second counter electrode layer over the driver circuit portion with the liquid crystal layer interposed between the driver circuit portion and the second counter electrode layer,wherein the pixel thin film transistor and the driver circuit thin film transistor each include;
a gate electrode layer;
a gate insulating layer over the gate electrode layer;
an oxide semiconductor layer over the gate insulating layer;
a source electrode layer and a drain electrode layer over the oxide semiconductor layer; and
an oxide insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, the oxide insulating layer being in contact with part of the oxide semiconductor layer.
1 Assignment
0 Petitions
Accused Products
Abstract
Disclosed is a semiconductor device which consumes low power and has high reliability and tolerance for electrostatic discharge. The semiconductor device includes, over a first substrate, a pixel portion and a driver circuit portion both of which have a thin film transistor having an oxide semiconductor layer. The semiconductor device further possesses a second substrate to which a first counter electrode layer and a second counter electrode layer are provided, and a liquid crystal layer is interposed between the first and second substrates. The first and second counter electrode layers are provided over the pixel portion and the driver circuit portion, respectively, and the second counter electrode layer has the same potential as the first counter electrode layer.
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Citations
35 Claims
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1. A semiconductor device comprising:
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a substrate; a driver circuit portion over the substrate, the driver circuit portion including a driver circuit thin film transistor; a pixel portion over the substrate, the pixel portion including a pixel thin film transistor; a first counter electrode layer over the pixel portion with a liquid crystal layer interposed between the pixel portion and the first counter electrode layer; and a second counter electrode layer over the driver circuit portion with the liquid crystal layer interposed between the driver circuit portion and the second counter electrode layer, wherein the pixel thin film transistor and the driver circuit thin film transistor each include; a gate electrode layer; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; and an oxide insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, the oxide insulating layer being in contact with part of the oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a substrate; a driver circuit portion over the substrate, the driver circuit portion including a driver circuit thin film transistor; a pixel portion over the substrate, the pixel portion including a pixel thin film transistor; a first counter electrode layer over the pixel portion with a liquid crystal layer interposed between the pixel portion and the first counter electrode layer; and a second counter electrode layer over the driver circuit portion with the liquid crystal layer interposed between the driver circuit portion and the second counter electrode layer, wherein the pixel thin film transistor and the driver circuit thin film transistor each include; a gate electrode layer; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; an oxide insulating layer over and in contact with the oxide semiconductor layer; and a source electrode layer and a drain electrode layer over the oxide semiconductor layer and the oxide insulating layer, wherein the source electrode layer and the drain electrode layer are in contact with the oxide semiconductor layer and the oxide insulating layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A semiconductor device comprising:
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a substrate; a driver circuit portion over the substrate, the driver circuit portion including a driver circuit thin film transistor; a pixel portion over the substrate, the pixel portion including a pixel thin film transistor; a first counter electrode layer over the pixel portion with a liquid crystal layer interposed between the pixel portion and the first counter electrode layer; and a second counter electrode layer over the driver circuit portion with the liquid crystal layer interposed between the driver circuit portion and the second counter electrode layer, wherein the pixel thin film transistor and the driver circuit thin film transistor each include; a gate electrode layer; a gate insulating layer over the gate electrode layer; a source electrode layer and a drain electrode layer over the gate insulating layer; an oxide semiconductor layer over and in contact with the gate insulating layer, the source electrode layer, and the drain electrode layer; and an oxide insulating layer over and in contact with the oxide semiconductor layer. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29)
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30. A semiconductor device comprising:
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a first substrate; a driver circuit portion over the first substrate, the driver circuit portion including a driver circuit thin film transistor; a pixel portion over the first substrate, the pixel portion including a pixel thin film transistor; a liquid crystal layer over the pixel portion and the driver circuit portion; and a counter electrode layer over the liquid crystal layer, the counter electrode layer overlapping with the pixel portion and the driver circuit portion, wherein the pixel thin film transistor and the driver circuit thin film transistor each include an oxide semiconductor layer as a channel formation region, and wherein an opening is provided to the counter electrode layer in a region between the driver circuit portion and the pixel portion. - View Dependent Claims (31, 32, 33, 34, 35)
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Specification