LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
First Claim
1. A light emitting device comprising:
- (a) a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type which are sequentially formed over a substrate;
(b) a first electrode formed over an exposed part of said first compound semiconductor layer; and
(c) a second electrode formed over said second compound semiconductor layer,wherein at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode are covered with an SOG layer.
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Abstract
A method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.
17 Citations
4 Claims
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1. A light emitting device comprising:
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(a) a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type which are sequentially formed over a substrate; (b) a first electrode formed over an exposed part of said first compound semiconductor layer; and (c) a second electrode formed over said second compound semiconductor layer, wherein at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode are covered with an SOG layer. - View Dependent Claims (2, 3, 4)
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Specification