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LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

  • US 20110068363A1
  • Filed: 12/01/2010
  • Published: 03/24/2011
  • Est. Priority Date: 10/18/2006
  • Status: Active Grant
First Claim
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1. A light emitting device comprising:

  • (a) a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type which are sequentially formed over a substrate;

    (b) a first electrode formed over an exposed part of said first compound semiconductor layer; and

    (c) a second electrode formed over said second compound semiconductor layer,wherein at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode are covered with an SOG layer.

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