TWO-DIMENSIONAL TIME DELAY INTEGRATION VISIBLE CMOS IMAGE SENSOR
First Claim
Patent Images
1. An image sensor comprising:
- first and second regions, the first region located adjacent to the second region;
a first photodiode located adjacent to the first region;
a second photodiode located adjacent to the second region;
a first transfer gate positioned above the first region, and configured to transfer a charge from the first photodiode to the first region; and
a second transfer gate positioned above the second region, configured to receive the charge in the second region, and configured to transfer the charge from the second region to the second photodiode.
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Abstract
A two dimensional time delay integration CMOS image sensor having a plurality of pinned photodiodes, each pinned photodiode collects a charge when light strikes the pinned photodiode, a plurality of electrodes separating the plurality of pinned photodiodes, the plurality of electrodes are configured for two dimensional charge transport between two adjacent pinned photodiodes, and a plurality of readout nodes connected to the plurality of pinned photodiodes via address lines.
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Citations
20 Claims
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1. An image sensor comprising:
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first and second regions, the first region located adjacent to the second region; a first photodiode located adjacent to the first region; a second photodiode located adjacent to the second region; a first transfer gate positioned above the first region, and configured to transfer a charge from the first photodiode to the first region; and a second transfer gate positioned above the second region, configured to receive the charge in the second region, and configured to transfer the charge from the second region to the second photodiode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for transferring a charge between a first photodiode and a second photodiode, comprising the steps of:
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creating a first well adjacent to the first photodiode during a first time period; and creating a second well adjacent to the first well and the second photodiode during a second time period partially but not entirely overlapping with the first time period. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A method for transferring a charge between a first photodiode and a second photodiode, comprising the steps of:
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applying a first voltage to a first electrode to adjust a first quasi-Fermi level of a first region located adjacent to the first photodiode during first and second cycles; and applying a second voltage to a second electrode to adjust a second quasi-Fermi level of a second region located adjacent to the first region and the second photodiode electrode during the second cycle and a third cycle. - View Dependent Claims (18, 19, 20)
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Specification