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Trench MOSFET with high cell density

  • US 20110068389A1
  • Filed: 09/21/2009
  • Published: 03/24/2011
  • Est. Priority Date: 09/21/2009
  • Status: Abandoned Application
First Claim
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1. A trench MOSFET comprising:

  • a plurality of gate trenches formed in epitaxial layer of a first conductivity doping type and filled with gate conductive layer over gate insulation layer;

    said plurality of gate trenches defining a plurality of mesas, each of said mesas being between every two adjacent said gate trenches;

    a plurality of source regions of a first conductivity doping type formed inside said mesas, each of said source regions having a side portion exposed at a sidewall of each of said gate trenches;

    a first body region of a second conductivity doping type formed between a pair of said gate trenches;

    a second body region of said second conductivity doping type having heavier doping concentration than said first body region, formed inside said mesas and between a pair of said source regions;

    a heavily-doped contact region of said second conductivity doping type on top of each mesa over said source region and said second body region, said heavily-doped contact region having a heavier doping concentration than said second body region; and

    a front metal over top surface of said mesas and extending into each gate trench, wherein said front metal is isolated from said gate conductive area inside said gate trenches.

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