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NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHODS FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE

  • US 20110068434A1
  • Filed: 07/09/2010
  • Published: 03/24/2011
  • Est. Priority Date: 09/24/2009
  • Status: Active Grant
First Claim
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1. A nitride semiconductor substrate comprising:

  • a main surface inclined at an angle of 71°

    or more and 79°

    or less with respect to a (0001) plane toward a [1-100] direction or inclined at an angle of 71°

    or more and 79°

    or less with respect to a (000-1) plane toward a [−

    1100] direction; and

    a chamfered portion located at an edge of an outer periphery of said main surface,said chamfered portion being inclined at an angle of 5°

    or more and 45°

    or less with respect to adjacent one of said main surface and a backside surface on a side opposite to said main surface.

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