Wafer Backside Interconnect Structure Connected to TSVs
First Claim
Patent Images
1. An integrated circuit structure comprising:
- a semiconductor substrate having a front surface and a back surface;
a conductive via passing through the semiconductor substrate;
a metal feature on the back surface of the semiconductor substrate and comprising;
a metal pad overlying and contacting the conductive via; and
a metal line over the conductive via, wherein the metal line comprises a dual damascene structure; and
a bump overlying the metal line.
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Abstract
An integrated circuit structure includes a semiconductor substrate having a front surface and a back surface; a conductive via passing through the semiconductor substrate; and a metal feature on the back surface of the semiconductor substrate. The metal feature includes a metal pad overlying and contacting the conductive via, and a metal line over the conductive via. The metal line includes a dual damascene structure. The integrated circuit structure further includes a bump overlying the metal line.
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Citations
16 Claims
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1. An integrated circuit structure comprising:
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a semiconductor substrate having a front surface and a back surface; a conductive via passing through the semiconductor substrate; a metal feature on the back surface of the semiconductor substrate and comprising; a metal pad overlying and contacting the conductive via; and a metal line over the conductive via, wherein the metal line comprises a dual damascene structure; and a bump overlying the metal line. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An integrated circuit structure comprising:
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a semiconductor substrate having a front surface and a back surface; a conductive via in the semiconductor substrate; a first metal feature extending from the back surface of the semiconductor substrate into the semiconductor substrate and contacting the conductive via; and a bump overlying and electrically connected to the first metal feature. - View Dependent Claims (8, 9, 10, 11, 12)
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13. An integrated circuit structure comprising:
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a semiconductor substrate having a front surface and a back surface; a conductive via passing through the semiconductor substrate; a first metal feature formed on the back surface of the semiconductor substrate and contacting the conductive via, wherein the first metal feature comprises a dual damascene structure; and a bump formed overlying the first metal feature. - View Dependent Claims (14, 15, 16)
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Specification